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ACT108W-600D,135

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
WeEn Semiconductors
ACT108W-600D
AC Thyristor power switch
ACT108W-600D All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 15 June 2016 7 / 16
001aab508
3.8 min
1.5
min
1.5
min
(3×)
2.3
4.6
6.3
1.5
min
All dimensions are in mm
Fig. 8. Minimum footprint SOT223
001aab509
7
4.6
15
36
9
10
18
4.5
60
50
All dimensions are in mm
Printed circuit board:
FR4 epoxy glass (1.6 mm thick), copper laminate
(35 um thick)
Fig. 9. Printed circuit board pad area: SOT223
WeEn Semiconductors
ACT108W-600D
AC Thyristor power switch
ACT108W-600D All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 15 June 2016 8 / 16
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
D
= 12 V; I
T
= 100 mA; LD+ G-;
T
j
= 25 °C; Fig. 10
0.5 - 5 mAI
GT
gate trigger current
V
D
= 12 V; I
T
= 100 mA; LD- G-;
T
j
= 25 °C; Fig. 10
0.5 - 5 mA
V
D
= 12 V; I
G
= 100 mA; LD+ G-;
T
j
= 25 °C; Fig. 11
- - 25 mAI
L
latching current
V
D
= 12 V; I
G
= 100 mA; LD- G-;
T
j
= 25 °C; Fig. 11
- - 25 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 12 - - 20 mA
V
T
on-state voltage I
T
= 1.1 A; T
j
= 25 °C; Fig. 13 - - 1.3 V
V
D
= 400 V; I
T
= 100 mA; T
j
= 125 °C 0.15 - - VV
GT
gate trigger voltage
V
D
= 12 V; I
T
= 100 mA; T
j
= 25 °C - - 0.9 V
V
D
= 600 V; T
j
= 25 °C - - 2 µAI
D
off-state current
V
D
= 600 V; T
j
= 125 °C - - 0.2 mA
V
CL
clamping voltage I
CL
= 0.1 mA; t
p
= 1 ms; T
j
≤ 125 °C;
Fig. 14
650 - - V
Dynamic charateristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit; Fig. 15
300 - - V/µs
dI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 1 A;
dV
com
/dt = 15 V/µs; gate open circuit;
Fig. 16; Fig. 17
0.15 - - A/ms
WeEn Semiconductors
ACT108W-600D
AC Thyristor power switch
ACT108W-600D All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 15 June 2016 9 / 16
I
GT
I
GT(25°C)
T
j
(°C)
- 50 0 150
100
50
1
2
3
0
003aac809
(1)
(2)
(1)
(2)
(1) LD+ G-
(2) LD- G-
Fig. 10. Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
- 50 1501000 50
003aac811
1
2
3
0
I
L
I
L(25°C)
Fig. 11. Normalized latching current as a function of
junction temperature
T
j
(°C)
- 50 1501000 50
003aac810
1
2
3
0
I
H
I
H(25°C)
Fig. 12. Normalized holding current as a function of
junction temperature
003aaf722
0.0
0.5
1.0
1.5
2.0
0.0 0.5 1.0 1.5 2.0
V
T
(V)
I
T
(A)
(1) (2) (3)
V
o
= 0.758 V; R
s
= 0.263 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 13. On-state current as a function of on-state
voltage
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ACT108W-600D,135

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Manufacturer:
WeEn Semiconductors
Description:
Triacs AC THYRISTOR PWR SW
Lifecycle:
New from this manufacturer.
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