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PBLS2003D,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
PBLS2003D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 27 August 2009 9 of 16
NXP Semiconductors
PBLS2003D
20 V PNP BISS loadswitch
T
amb
=25°CI
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
Fig 9. TR1 (PNP): Collector current as a function of
collector-emitter voltage; typical values
Fig 10. TR1 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 11. TR1 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 12. TR1 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
006aaa420
V
CE
(V)
−0 −6−4−2
−0.8
−1.2
−0.4
−1.6
−2.0
I
C
(A)
−0
I
B
= −13 mA
−10.4 mA
−11.7 mA
−9.1 mA
−6.5 mA
−3.9 mA
−5.2 mA
−2.6 mA
−1.3 mA
−7.8 mA
006aaa421
10
1
10
2
R
CEsat
(Ω)
10
−1
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(2)
(3)
006aaa422
−10
−1
−10
−2
−1
V
CEsat
(V)
−10
−3
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(2)
(3)
006aaa423
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
1
10
10
2
10
3
R
CEsat
(Ω)
10
−1
(1)
(2)
(3)
PBLS2003D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 27 August 2009 10 of 16
NXP Semiconductors
PBLS2003D
20 V PNP BISS loadswitch
V
CE
=5V
(1) T
amb
= 150 °C
(2) T
amb
=25°C
(3) T
amb
= −40 °C
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −40 °C
Fig 13. TR2 (NPN): DC current gain as a function of
collector current; typical values
Fig 14. TR2 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
V
CE
= 0.3 V
(1) T
amb
= −40 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
V
CE
=5V
(1) T
amb
= −40 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 15. TR2 (NPN): On-state input voltage as a
function of collector current; typical values
Fig 16. TR2 (NPN): Off-state input voltage as a
function of collector current; typical values
I
C
(mA)
10
−1
10
2
101
006aaa034
10
2
10
10
3
h
FE
1
(1)
(2)
(3)
I
C
(mA)
110
2
10
006aaa035
10
−1
1
V
CEsat
(V)
10
−2
(1)
(2)
(3)
006aaa036
I
C
(mA)
10
−1
10
2
101
1
10
V
I(on)
(V)
10
−1
(2)
(3)
(1)
006aaa037
I
C
(mA)
10
−2
10110
−1
1
10
V
I(off)
(V)
10
−1
(1)
(2)
(3)
PBLS2003D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 27 August 2009 11 of 16
NXP Semiconductors
PBLS2003D
20 V PNP BISS loadswitch
8. Test information
Fig 17. BISS transistor switching time definition
I
C
= −1 A; I
Bon
= −50 mA; I
Boff
= 50 mA; R1 = open; R2 = 45 Ω; R
B
= 145 Ω; R
C
=10Ω
Fig 18. Test circuit for switching times
006aaa266
−
I
Bon
(100 %)
−
I
B
input pulse
(idealized waveform)
−
I
Boff
90 %
10 %
−
I
C
(100 %)
−
I
C
t
d
t
on
90 %
10 %
t
r
output pulse
(idealized waveform)
t
f
t
t
s
t
off
R
C
R2
R1
DUT
mgd624
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
I
V
CC
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PBLS2003D,115

Mfr. #:
Buy PBLS2003D,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - Pre-Biased BISS LDSWITCH TAPE-7
Lifecycle:
New from this manufacturer.
Delivery:
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