PBLS2003D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 27 August 2009 3 of 16
NXP Semiconductors
PBLS2003D
20 V PNP BISS loadswitch
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
TR2; NPN resistor-equipped transistor
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 50 V
V
EBO
emitter-base voltage open collector - 10 V
V
I
input voltage
positive - +40 V
negative - −10 V
I
O
output current - 100 mA
I
CM
peak collector current t
p
≤ 300 µs - 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 200 mW
Per device
P
tot
total power dissipation
[1]
- 400 mW
[2]
- 530 mW
[3]
- 600 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 1cm
2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
T
amb
(°C)
0 16012040 80
006aaa414
0.4
0.2
0.6
0.8
P
tot
(W)
0
(1)
(2)
(3)
