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SI3529DV-T1-E3

P1-P3P4-P6P7-P9P10-P12
www.vishay.com
4
Document Number: 73455
S09-2277-Rev. C, 02-Nov-09
Vishay Siliconix
Si3529DV
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0
V
GS
= 10 V thru 5 V
4
V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
3 V
0.00
0.05
0.10
0.15
0.20
0.25
0246810
V
GS
= 10 V
I
D
- Drain Current (A)
V
GS
= 4.5 V
R
DS(on)
- On-Resistance (mΩ)
0
2
4
6
8
10
012345
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 20 V
V
DS
= 32 V
I
D
= 2.25 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
1
2
3
4
012345
25 °C
T
C
= 125 °C
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
70
140
210
280
0 8 16 24 32 40
C
rss
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
V
GS
= 10 V
I
D
= 2.2 A
Document Number: 73455
S09-2277-Rev. C, 02-Nov-09
www.vishay.com
5
Vishay Siliconix
Si3529DV
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1.0
0.01
10
0.0 0.2 0.4 0.6 0.8
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
- 50 - 25 0 25 50 75 100 125 150
T
J
- Temperature (°C)
V
GS(th)
Variance (V)
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
I
D
= 250 µA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.07
0.14
0.21
0.28
0.35
0246810
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
I
D
= 2.0 A
0.01
0
1
6
8
2
4
10 300.1
Power (W)
Time (s)
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
1 ms
T
A
= 25 °C
Single Pulse
10 ms
100 ms
DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
1 s
10 s
Limited by R
DS(on)
*
100 s
100 µs
10 µs
>
www.vishay.com
6
Document Number: 73455
S09-2277-Rev. C, 02-Nov-09
Vishay Siliconix
Si3529DV
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Single Pulse Avalanche Capability
10.0
0.00001 0.001 0.1 1
0.0
0.01
I
AV
(A) at T
A
= 150 °C
1.0
0.1
0.0001
I
AV
(A) at T
A
= 25 °C
I
C
- Peak Avalanche Current (A)
T
A
- Time in Avalanche (s)
Power Derating, Junction-to-Ambient
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power Dissipation (W)
P1-P3P4-P6P7-P9P10-P12

SI3529DV-T1-E3

Mfr. #:
Buy SI3529DV-T1-E3
Manufacturer:
Vishay
Description:
MOSFET N/P-CH 40V 2.5A 6-TSOP
Lifecycle:
New from this manufacturer.
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