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SI3529DV-T1-E3

P1-P3P4-P6P7-P9P10-P12
Document Number: 73455
S09-2277-Rev. C, 02-Nov-09
www.vishay.com
7
Vishay Siliconix
Si3529DV
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
2
1
0.1
0.01
10
-3
10
-2
1 1 0 60010
-1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
100
1. Duty Cycle, D =
2. Per Unit Base = R
th J A
= 120 °C/W
3. T
JM
- T
A
= P
DM
Z
th J A
(t )
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
10110
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
www.vishay.com
8
Document Number: 73455
S09-2277-Rev. C, 02-Nov-09
Vishay Siliconix
Si3529DV
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0
V
GS
= 10 V thru 6 V
3 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
4 V
5 V
0.00
0.10
0.20
0.30
0.40
0.50
01234
V
GS
= 10 V
I
D
- Drain Current (A)
V
GS
= 4.5 V
R
DS(on)
- On-Resistance (mΩ)
0
2
4
6
8
10
012345
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
I
D
= 1.7 A
V
DS
= 20
V
V
DS
= 32 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.5
1.0
1.5
2.0
012345
T
C
= 125 °C
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
25 °C
0
70
140
210
280
0 8 16 24 32 40
C
rss
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
V
GS
= 10 V
I
D
= 1.7 A
Document Number: 73455
S09-2277-Rev. C, 02-Nov-09
www.vishay.com
9
Vishay Siliconix
Si3529DV
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.01
10
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
1.0 1.20.0 0.2 0.4 0.6 0.8
- 0.4
- 0.2
0.0
0.2
0.4
0.6
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
T
J
- Temperature (°C)
V
GS(th)
(V)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.0
0.2
0.4
0.6
0.8
0246810
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
I
D
= 1.7 A
0.01
0
1
6
8
2
4
10 300.1
Power (W)
Time (s)
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
1 ms
T
A
= 25 °C
Single Pulse
10 ms
100 ms
DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
1 s
10 s
Limited by R
DS(on)
100 s
100 µs
10 µs
>
*
P1-P3P4-P6P7-P9P10-P12

SI3529DV-T1-E3

Mfr. #:
Buy SI3529DV-T1-E3
Manufacturer:
Vishay
Description:
MOSFET N/P-CH 40V 2.5A 6-TSOP
Lifecycle:
New from this manufacturer.
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