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TPC6107(TE85L,F,M)

P1-P3P4-P6P7-P7
TPC6107
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV)
TPC6107
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• Low drain-source ON resistance: R
DS (ON)
= 40 mΩ (typ.)
• High forward transfer admittance: |Y
fs
| = 9.6 S (typ.)
• Low leakage current: I
DSS
= −10 μA (max) (V
DS
= −20 V)
• Enhancement model: V
th
= −0.5 to −1.2 V (V
DS
= −10 V, I
D
= −200 μA)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
−20 V
Drain-gate voltage (R
GS
= 20 kΩ) V
DGR
−20 V
Gate-source voltage V
GSS
±12 V
DC (Note 1) I
D
−4.5
Drain current
Pulse (Note 1) I
DP
−18
A
Drain power dissipation (t = 5 s)
(Note 2a)
P
D
2.2 W
Drain power dissipation (t = 5 s)
(Note 2b)
P
D
0.7 W
Single pulse avalanche energy (Note 3) E
AS
1.3 mJ
Avalanche current I
AR
−2.25 A
Repetitive avalanche energy (Note 4) E
AR
0.22 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Circuit Configuration
Characteristics Symbol Max Unit
Thermal resistance, channel to ambient
(t = 5 s) (Note 2a)
R
th (ch-a)
56.8 °C/W
Thermal resistance, channel to ambient
(t = 5 s) (Note 2b)
R
th (ch-a)
178.5 °C/W
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), see the third page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC ⎯
JEITA ⎯
TOSHIBA 2-3T1A
Weight: 0.011 g (typ.)
6 4
1 2 3
5
TPC6107
2009-09-29
2
Electrical Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
GSS
V
GS
= ±10 V, V
DS
= 0 V ⎯ ⎯ ±10 μA
Drain cut-OFF current I
DSS
V
DS
= −20 V, V
GS
= 0 V ⎯ ⎯ −10 μA
V
(BR) DSS
I
D
= −10 mA, V
GS
= 0 V −20 ⎯ ⎯
Drain-source breakdown voltage
V
(BR) DSX
I
D
= −10 mA, V
GS
= 12 V −8 ⎯ ⎯
V
Gate threshold voltage V
th
V
DS
= −10 V, I
D
= −200 μA −0.5 ⎯ −1.2 V
R
DS (ON)
V
GS
= −2 V, I
D
= −2.2 A ⎯ 110 180
R
DS (ON)
V
GS
= −2.5 V, I
D
= −2.2 A ⎯ 70 100
Drain-source ON resistance
R
DS (ON)
V
GS
= −4.5 V, I
D
= −2.2 A ⎯ 40 55
mΩ
Forward transfer admittance |Y
fs
| V
DS
= −10 V, I
D
= −2.2 A 4.8 9.6 ⎯ S
Input capacitance C
iss
⎯ 680 ⎯
Reverse transfer capacitance C
rss
⎯ 130 ⎯
Output capacitance C
oss
V
DS
= −10 V, V
GS
= 0 V, f = 1 MHz
⎯ 140 ⎯
pF
Rise time t
r
⎯ 6 ⎯
Turn-ON time t
on
⎯ 16 ⎯
Fall time t
f
⎯ 38 ⎯
Switching time
Turn-OFF time t
off
Duty ≤ 1%, t
w
= 10 μs
⎯ 85 ⎯
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
⎯ 9.8 ⎯
Gate-source charge Q
gs
⎯ 2 ⎯
Gate-drain (“miller”) charge Q
gd
V
DD
∼
−
−16 V, V
GS
= −5 V,
I
D
= −4.5 A
⎯ 3 ⎯
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Pulse drain reverse current (Note 1) I
DRP
⎯ ⎯ ⎯ −18 A
Forward voltage (diode) V
DSF
I
DR
= −4.5 A, V
GS
= 0 V ⎯ ⎯ 1.2 V
R
L
= 4.5 Ω
V
DD
∼
−
−10 V
−5 V
V
GS
0 V
4.7 Ω
I
D
= −2.2 A
V
OUT
TPC6107
2009-09-29
3
Marking
(Note 5)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s)
(b) Device mounted on a glass-epoxy board (b) (t = 5 s)
Note 3: V
DD
= 16 V, T
ch
= 25°C (initial), L = 0.2 mH, R
G
= 25 Ω, I
AR
= −2.25 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: • on lower left of the marking indicates Pin 1.
Note 6 A dot marking identifies the indication of product Labels.
Without a dot: `Pb`/INCLUDES > MCV
With a dot: `G`/RoHS COMPATIBLE or `G`/RoHS `Pb`
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
(a)
FR-4
25.4 × 25.4 × 0.8
Unit: (mm)
(b)
FR-4
25.4 × 25.4 × 0.8
Unit: (mm)
Part No.
(or abbreviation code)
S3G
Note 6
Lot code (month)
Lot No.
Pin #1 Lot code
(year)
Product-specific code
P1-P3P4-P6P7-P7

TPC6107(TE85L,F,M)

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