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TPC6107(TE85L,F,M)
P1-P3
P4-P6
P7-P7
TPC6107
2009-09-29
4
Forward
transfer
admittance |Y
fs
| (S)
Drain
−
source
voltage V
DS
(V)
Drain
−
source
voltage V
DS
(V)
I
D
– V
DS
Drain
current I
D
(A)
Drain
−
source
voltage V
DS
(V)
I
D
– V
DS
Drain
current I
D
(A)
Gate
−
source
voltage V
GS
(
V
)
I
D
– V
GS
Drain
current I
D
(A)
Gate
−
source
voltage V
GS
(
V
)
V
DS
– V
GS
Drain
current I
D
(A)
|Y
fs
| – I
D
Drain
current I
D
(A)
Drain
−
source ON resistance
R
DS (ON)
(
m
Ω
)
R
DS (ON)
– I
D
0
0
−
1
−
2
−
3
−
4
−
5
−
0.4
−
0.8
−
1.2
−
2.0
Common source
Ta
=
25°C Pulse
te
st
V
GS
=
−
1.4 V
−
1.6 V
−
1.7 V
−
1.8 V
−
2.0 V
−
4 V
−
5 V
−
3 V
−
2.5 V
−
1.6
−
1.9 V
−
5 V
0
−
1
−
2
−
3
−
4
−
5
−
2.0 V
−
1.8 V
−
2.5 V
−
1.6 V
V
GS
=
−
1.4 V
−
2.2 V
−
2.3 V
−
3 V
0
−
2
−
4
−
6
−
8
−
10
Common source
Ta
=
25°C Pulse
te
st
−
4 V
10
1000
−
0.1
−
1
−
10
−
100
100
−
2.5 V
V
GS
=
−
4.5 V
−
2.0 V
Common source
Ta
=
25°C
Pulse test
30
300
−
0.3
−
3
−
30
0
−
0.2
−
0.4
−
0.6
−
0.8
−
1.0
0
−
2
−
4
−
6
−
8
−
10
−
1.1 A
−
2.2 A
Common source
Ta
=
25°C
Pulse test
I
D
=
−
4.5 A
0.1
1
10
100
−
0.1
−
1
−
10
−
100
100°C
25°C
Ta
=
−
55°C
Common source
V
DS
=
−
10 V
Pulse test
0.3
3
30
−
0.3
−
3
−
30
Common source
V
DS
=
−
10 V
Pulse test
−
1.5 V
−
1.9 V
−
1.7 V
Ta
=
−
55°C
0
−
4
−
8
−
10
0
−
0.5
−
1.0
−
1.5
−
2.0
−
2.5
100°C
25°C
−
6
−
2
TPC6107
2009-09-29
5
Ambient
temperature T
a (
°
C)
R
DS (ON)
– T
a
Drain-source ON resist
ance
R
DS (ON)
(
m
Ω
)
Drain
−
source
voltage V
DS
(V)
I
DR
– V
DS
Drain reverse current
I
DR
(A)
Drain
−
source
voltage V
DS
(V)
C – V
DS
Capacitance C (pF)
Ambient
temperature T
a (
°
C)
V
th
– T
a
Gate threshold voltage
V
th
(V)
Ambient
temperature T
a (
°
C)
P
D
– T
a
Drain power dissipation
P
D
(W)
Gate
−
source
voltage V
GS
(
V
)
T
otal gate charge
Q
g
(
n
C
)
Dynamic input/output
characteristics
Drain
−
source
voltage V
DS
(V)
−
80
−
40
0
40
80 160
120
0
−
0.8
−
1.2
−
2.0
Common source
V
DS
=
−
10 V
I
D
=
−
200
μ
A
Pulse test
−
1.6
−
0.4
0
0
0.5
1.0
1.5
2.0
2.5
40 80
120
160
(1) t
=
5 s
(2) t
=
5 s
(1) DC
(2) DC
−
0.1
−
3
0 0.4
0.6
0.8
1.0
1.2
0.2
−
100
Common source
Ta
=
25°C
Pulse test
−
2 V
−
1 V
V
GS
=
−
0 V
−
4 V
−
1
−
30
10
100
1000
10000
−
0.1
−
1
−
10
−
100
C
rss
C
oss
C
iss
Common source
Ta
=
25°C
f
=
1 MHz
V
GS
=
0 V
−
0.3
−
3
−
30
30
300
3000
0
−
4
−
10
−
12
−
6
−
2
0
0
−
5
5
10
−
10
−
15
−
30
Common source
I
D
=
−
4.5 A
Ta
=
25°C
Pulse test
V
GS
V
DD
=
−
16 V
20
−
25
V
DS
−
8 V
15
0
50
100
150
200
−
80
−
40 0
40 80
160
Common source
Pulse test
120
V
GS
=
−
2.0 V
I
D
=
−
2.2 A
−
1.1 A
−
4.5 A
−
4.5 V
−
2.5 V
−
4.5 A,
−
2.2 A,
−
1.1 A
−
2.2 A,
−
1.1 A
−
10
−
0.3
−
4 V
−
20
−
8
(1)
Device mounted
on a
glass-epoxy
board (a)
(Note 2a)
(2)
Device mounted
on a
glass-epoxy
board (b)
(Note 2b)
TPC6107
2009-09-29
6
r
th
−
t
w
Pulse
width t
w
(s)
T
ransient thermal impedance
r
th
(
°
C
/
W
)
0.1
0.001 0.01
0.1
10
100
1000
1
0.3
3
30
100
300
1000
Single pulse
1
10
Device mo
unted on a glas
s-
epoxy board (
b) (Note 2b)
Device mo
unted on a glas
s-
epoxy board (
a) (Note 2a)
Safe operating area
Drain
−
source
voltage V
DS
(V)
Drain
current I
D
(A)
−
0.1
−
0.1
−
0.3
−
1
−
3
−
10
−
100
−
30
−
0.3
−
1
−
10
−
3
−
100
−
30
I
D
max (Pulse)
*
10 ms
*
1 ms
*
V
DSS
max
*
:
Single no
nrepetitive pulse
Ta
=
25°C
Curves must be der
ated
linearly wi
th increase in
temperature.
P1-P3
P4-P6
P7-P7
TPC6107(TE85L,F,M)
Mfr. #:
Buy TPC6107(TE85L,F,M)
Manufacturer:
Description:
Lifecycle:
New from this manufacturer.
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