TPC6107(TE85L,F,M)

TPC6107
2009-09-29
4
Forward transfer admittance |Y
fs
| (S)
Drainsource voltage V
DS
(V)
Drainsource voltage V
DS
(V)
I
D
– V
DS
Drain current I
D
(A)
Drain
source voltage V
DS
(V)
I
D
– V
DS
Drain current I
D
(A)
Gatesource voltage V
GS
(V)
I
D
– V
GS
Drain current I
D
(A)
Gate
source voltage V
GS
(V)
V
DS
– V
GS
Drain current I
D
(A)
|Y
fs
| – I
D
Drain current I
D
(A)
Drainsource ON resistance
R
DS (ON)
(mΩ)
R
DS (ON)
– I
D
0
0
1
2
3
4
5
0.4 0.8 1.2 2.0
Common source
Ta = 25°C Pulse test
V
GS
= 1.4 V
1.6 V
1.7 V
1.8 V
2.0 V
4 V
5 V
3 V
2.5 V
1.6
1.9 V
5 V
0 1 2 3 4 5
2.0 V
1.8 V
2.5 V
1.6 V
V
GS
= 1.4 V
2.2 V
2.3 V
3 V
0
2
4
6
8
10
Common source
Ta = 25°C Pulse test
4 V
10
1000
0.1 1 10 100
100
2.5 V
V
GS
= 4.5 V
2.0 V
Common source
Ta = 25°C
Pulse test
30
300
0.3 3 30
0
0.2
0.4
0.6
0.8
1.0
0 2 4 6 8 10
1.1 A
2.2 A
Common source
Ta = 25°C
Pulse test
I
D
= 4.5 A
0.1
1
10
100
0.1 1 10 100
100°C
25°C
Ta = 55°C
Common source
V
DS
= 10 V
Pulse test
0.3
3
30
0.3 3 30
Common source
V
DS
= 10 V
Pulse test
1.5 V
1.9 V
1.7 V
Ta = 55°C
0
4
8
10
0 0.5 1.0 1.5 2.0 2.5
100°C
25°C
6
2
TPC6107
2009-09-29
5
Ambient temperature Ta (°C)
R
DS (ON)
– Ta
Drain-source ON resistance
R
DS (ON)
(mΩ)
Drain
source voltage V
DS
(V)
I
DR
– V
DS
Drain reverse current I
DR
(A)
Drainsource voltage V
DS
(V)
C – V
DS
Capacitance C (pF)
Ambient temperature Ta (°C)
V
th
– Ta
Gate threshold voltage V
th
(V)
Ambient temperature Ta (°C)
P
D
– Ta
Drain power dissipation P
D
(W)
Gatesource voltage V
GS
(V)
Total gate charge Q
g
(nC)
Dynamic input/output
characteristics
Drainsource voltage V
DS
(V)
80 40 0 40 80 160120
0
0.8
1.2
2.0
Common source
V
DS
= 10 V
I
D
= 200 μA
Pulse test
1.6
0.4
0
0
0.5
1.0
1.5
2.0
2.5
40 80 120 160
(1) t = 5 s
(2) t = 5 s
(1) DC
(2) DC
0.1
3
0 0.4 0.6 0.8 1.0 1.20.2
100
Common source
Ta = 25°C
Pulse test
2 V
1 V
V
GS
= 0 V
4 V
1
30
10
100
1000
10000
0.1 1 10 100
C
rss
C
oss
C
iss
Common source
Ta = 25°C
f = 1 MHz
V
GS
= 0 V
0.3 3 30
30
300
3000
0
4
10
12
6
2
0
0
5
5
10
10
15
30
Common source
I
D
= 4.5 A
Ta = 25°C
Pulse test
V
GS
V
DD
= 16 V
20
25
V
DS
8 V
15
0
50
100
150
200
80 40 0 40 80 160
Common source
Pulse test
120
V
GS
= 2.0 V
I
D
= 2.2 A
1.1 A
4.5 A
4.5 V
2.5 V
4.5 A, 2.2 A, 1.1 A
2.2 A, 1.1 A
10
0.3
4 V
20
8
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
TPC6107
2009-09-29
6
r
th
t
w
Pulse width t
w
(s)
Transient thermal impedance r
th
(°C/W)
0.1
0.001 0.01 0.1 10 100 1000
1
0.3
3
30
100
300
1000
Single pulse
1
10
Device mounted on a glass-
epoxy board (b) (Note 2b)
Device mounted on a glass-
epoxy board (a) (Note 2a)
Safe operating area
Drainsource voltage V
DS
(V)
Drain current I
D
(A)
0.1
0.1 0.3 1 3 10 10030
0.3
1
10
3
100
30
I
D
max (Pulse)*
10 ms*
1 ms*
V
DSS
max
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.

TPC6107(TE85L,F,M)

Mfr. #:
Manufacturer:
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Lifecycle:
New from this manufacturer.
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