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NSS40201LT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2005
October, 2016 − Rev. 9
1 Publication Order Number:
NSS40201L/D
NSS40201LT1G,
NSV40201LT1G
40 V, 2.0 A, Low V
CE(sat)
NPN Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Device Package Shipping
†
ORDERING INFORMATION
NSS40201LT1G SOT−23
(Pb−Free)
3,000 / Tape & Ree
l
MARKING DIAGRAM
SOT−23 (TO−236)
CASE 318
STYLE 6
40 VOLTS, 2.0 AMPS
NPN LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
44 mW
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
VB M G
G
VB = Specific Device Code*
M = Date Code*
G = Pb−Free Package
*Specific Device Code, Date Code or overbar
orientation and/or location may vary
depending upon manufacturing location.
This is a representation only and actual
devices may not match this drawing exactly.
COLLECTOR
3
1
BASE
2
EMITTER
(Note: Microdot may be in either location)
NSV40201LT1G SOT−23
(Pb−Free)
3,000 / Tape & Ree
l
www.onsemi.com
NSS40201LT1G, NSV40201LT1G
www.onsemi.com
2
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Symbol Max Unit
Collector-Emitter Voltage V
CEO
40 Vdc
Collector-Base Voltage V
CBO
40 Vdc
Emitter-Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
2.0 A
Collector Current − Peak I
CM
6.0 A
Electrostatic Discharge ESD HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
(Note 1)
460
3.7
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
(Note 1)
270
°C/W
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
(Note 2)
540
4.3
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
(Note 2)
230
°C/W
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. FR−4 @ 100 mm
2
, 1 oz. copper traces.
2. FR−4 @ 500 mm
2
, 1 oz. copper traces.
NSS40201LT1G, NSV40201LT1G
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
40 − −
Vdc
Collector−Base Breakdown Voltage
(I
C
= 0.1 mAdc, I
E
= 0)
V
(BR)CBO
40 − −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= 0.1 mAdc, I
C
= 0)
V
(BR)EBO
6.0 − −
Vdc
Collector Cutoff Current
(V
CB
= 40 Vdc, I
E
= 0)
I
CBO
− − 0.1
mAdc
Emitter Cutoff Current
(V
EB
= 6.0 Vdc)
I
EBO
− − 0.1
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I
C
= 10 mA, V
CE
= 2.0 V)
(I
C
= 500 mA, V
CE
= 2.0 V)
(I
C
= 1.0 A, V
CE
= 2.0 V)
(I
C
= 2.0 A, V
CE
= 2.0 V)
h
FE
200
200
180
180
−
370
−
−
−
−
−
−
Collector−Emitter Saturation Voltage (Note 3)
(I
C
= 0.1 A, I
B
= 0.010 A)
(I
C
= 1.0 A, I
B
= 0.100 A)
(I
C
= 1.0 A, I
B
= 0.010 A)
(I
C
= 2.0 A, I
B
= 0.200 A)
V
CE(sat)
−
−
−
−
0.006
0.044
0.085
0.082
0.011
0.060
0.115
0.115
V
Base−Emitter Saturation Voltage (Note 3)
(I
C
= 1.0 A, I
B
= 10 mA)
V
BE(sat)
− 0.760 0.900
V
Base−Emitter Turn−on Voltage (Note 3)
(I
C
= 1.0 A, V
CE
= 2.0 V)
V
BE(on)
− 0.760 0.900
V
Cutoff Frequency
(I
C
= 100 mA, V
CE
= 5.0 V, f = 100 MHz)
f
T
150 − −
MHz
Input Capacitance (V
EB
= 0.5 V, f = 1.0 MHz) Cibo − − 450 pF
Output Capacitance (V
CB
= 3.0 V, f = 1.0 MHz) Cobo − − 45 pF
SWITCHING CHARACTERISTICS
Delay (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA) t
d
− − 100 ns
Rise (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA) t
r
− − 100 ns
Storage (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA) t
s
− − 750 ns
Fall (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA) t
f
− − 110 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
P1-P3P4-P6

NSS40201LT1G

Mfr. #:
Buy NSS40201LT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT LO V NPN TRANSISTOR 40V 4.0A
Lifecycle:
New from this manufacturer.
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