NSS40201LT1G

NSS40201LT1G, NSV40201LT1G
www.onsemi.com
4
TYPICAL CHARACTERISTICS
150°C
25°C
−55°C
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
1010.10.010.001
0
0.05
0.1
0.15
0.2
0.25
1010.10.010.001
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
1010.10.010.001
100
200
300
400
500
600
700
800
1010.10.010.001
0.3
0.4
0.5
0.6
0.7
0.8
1.0
1.1
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Saturation Region
I
C
, COLLECTOR CURRENT (A) I
B
, BASE CURRENT (mA)
1010.10.010.001
0.1
0.2
0.3
0.4
0.5
0.6
0.9
1.0
1001010.10.01
0
0.2
0.4
0.6
0.8
1.0
V
CE(sat)
, COLLECTOR EMITTER
SATURATION VOLTAGE (V)
V
CE(sat)
, COLLECTOR EMITTER
SATURATION VOLTAGE (V)
h
FE
, DC CURRENT GAIN
V
BE(sat)
, BASE EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE EMITTER TURN−ON
VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
/I
B
= 10
150°C
25°C
−55°C
I
C
/I
B
= 100
150°C (5.0 V)
150°C (2.0 V)
25°C (5.0 V)
25°C (2.0 V)
−55°C (5.0 V)
−55°C (2.0 V)
0.9
150°C
25°C
−55°C
V
CE
= 2.0 V
150°C
25°C
−55°C
0.7
0.8
I
C
= 500 mA300 mA
100 mA
10 mA
I
C
/I
B
= 10
NSS40201LT1G, NSV40201LT1G
www.onsemi.com
5
TYPICAL CHARACTERISTICS
100 ms
1 s
1 ms
100 ms
Figure 7. Input Capacitance Figure 8. Output Capacitance
V
EB
, EMITTER BASE VOLTAGE (V) V
CB
, COLLECTOR BASE VOLTAGE (V)
6543210
175
200
225
275
300
325
375
400
35302520151050
10
20
30
40
50
60
70
80
Figure 9. Safe Operating Area
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
1001010.10.01
0.01
0.1
1
10
C
ibo
, INPUT CAPACITANCE (pF)
C
obo
, OUTPUT CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (A)
250
350
C
ibo(pF)
C
obo(pF)
10 ms
Single Pulse Test
at T
amb
= 25°C
NSS40201LT1G, NSV40201LT1G
www.onsemi.com
6
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
E
E
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b 0.37 0.44 0.50 0.015
c 0.08 0.14 0.20 0.003
D 2.80 2.90 3.04 0.110
E 1.20 1.30 1.40 0.047
e 1.78 1.90 2.04 0.070
L 0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
H
E
0.35 0.54 0.69 0.014 0.021 0.027
c
0 −−− 10 0 −−− 10
T
°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X
0.95
RECOMMENDED
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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NSS40201LT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT LO V NPN TRANSISTOR 40V 4.0A
Lifecycle:
New from this manufacturer.
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