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VSMY98545

P1-P3P4-P6P7-P7
VSMY98545
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 01-Jul-16
1
Document Number: 81223
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Power Infrared Emitting Diode, 850 nm,
Surface Emitter Technology
DESCRIPTION
As part of the SurfLight
TM
portfolio, the VSMY98545 is an
infrared, 850 nm emitting diode based on surface emitter
technology with high radiant power and high speed, molded
in low thermal resistance SMD package with lens. A 42 mil
chip provides outstanding low forward voltage and allows
DC operation of the device up to 1.5 A.
FEATURES
• Package type: surface mount
• Package form: high power SMD with lens
• Dimensions (L x W x H in mm): 3.85 x 3.85 x 2.24
• Peak wavelength: λ
p
= 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 45°
• Low forward voltage
• Designed for high drive currents: up to 1.5 A (DC) and up
to 5 A pulses
• Low thermal resistance: R
thJP
= 10 K/W
• Floor life: 168 h, MSL 3, according to J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared illumination for CMOS cameras (CCTV)
• Illumination for cameras (3D gaming)
• Machine vision
• Bio identification
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT I
e
(mW/sr) ϕ (deg) λ
p
(nm)
t
r
(ns)
VSMY98545 380 ± 45 850 15
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMY98545 Tape and reel MOQ: 600 pcs, 600 pcs/reel High power with lens
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
1.5 A
Peak forward current t
p
/T = 0.5, t
p
= 100 μs I
FM
2A
Surge forward current t
p
= 100 μs I
FSM
5A
Power dissipation P
V
3.5 W
Junction temperature T
j
115 °C
Operating temperature range T
amb
-40 to +85 °C
Storage temperature range T
stg
-55 to +100 °C
Soldering temperature According to Fig. 10, J-STD-20 T
sd
260 °C
Thermal resistance junction / pin JESD 51 R
thJP
10 K/W
VSMY98545
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 01-Jul-16
2
Document Number: 81223
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 20406080100
P
V
- Power Dissipation (W)
T
amb
- Ambient Temperature (°C)
R
thJA
= 10 K/W
0
0.3
0.6
0.9
1.2
1.5
1.8
0 20406080100
I
F
- Forward Current (A)
T
amb
- Ambient Temperature (°C)
R
thJA
= 10 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 1 A, t
p
= 20 ms V
F
-1.82.5V
I
F
= 5 A, t
p
= 100 μs V
F
-2.6-V
Temperature coefficient of V
F
I
F
= 100 mA TK
VF
--1.5-mV/K
Reverse current V
R
= 5 V I
R
Not designed for reverse operation μA
Radiant intensity
I
F
= 1 A, t
p
= 20 ms I
e
250 380 - mW/sr
I
F
= 5 A, t
p
= 100 μs I
e
-1600-mW/sr
Radiant power I
F
= 1 A, t
p
= 20 ms φ
e
-800-mW
Temperature coefficient of φ
e
I
F
= 100 mA TKφ
e
- -0.13 - %/K
Angle of half intensity ϕ -± 45-deg
Peak wavelength I
F
= 1 A λ
p
-850-nm
Spectral bandwidth I
F
= 1 A Δλ -35-nm
Temperature coefficient of λ
p
I
F
= 100 mA TKλ
p
-0.2-nm/K
Rise time I
F
= 1 A t
r
-15-ns
Fall time I
F
= 1 A t
f
-18-ns
VSMY98545
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 01-Jul-16
3
Document Number: 81223
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Forward Voltage vs. Ambient Temperature
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature
Fig. 8 - Relative Radiant Power vs. Wavelength
0.1
1
10
1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
I
F
- Forward Current (A)
V
F
- Forward Voltage (V)
t
p
= 100 μs
1.20
1.30
1.40
1.50
1.60
1.70
-50-250 255075100
V
F
- Forward Voltage (V)
T
amb
- Ambient Temperature (°C)
I
F
= 100 mA
t
p
= 20 ms
80
85
90
95
100
105
110
115
120
-60 -40 -20 0 20 40 60 80 100
V
F, rel
- Relative Forward Voltage (%)
T
amb
- Ambient Temperature (°C)
I
F
= 100 mA
t
p
= 20 ms
100
1000
0.1 1.0 10
I
e
- Radiant Intensity (mW/s r)
I
F
- Forward Current (A)
t
p
= 100 μs
80
85
90
95
100
105
110
115
120
-60 -40 -20 0 20 40 60 80 100
I
e, rel
- Relative Radiant Intensity (%)
T
amb
- Ambient Temperature (°C)
I
F
= 100 mA
t
p
= 20 ms
0
10
20
30
40
50
60
70
80
90
100
700 750 800 850 900 950 1000
I
e, rel
- Relative Radiant Intensity (%)
λ - Wavelength (nm)
I
F
= 1 A
P1-P3P4-P6P7-P7

VSMY98545

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Infrared Emitters - High Power 45Degree 350mW 850nm
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