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BST72A,112

P1-P3P4-P6P7-P9P10-P12
April 1995 4
Philips Semiconductors Product specification
N-channel vertical D-MOS transistor BST72A
CHARACTERISTICS
T
j
=25°C unless otherwise specified
Drain-source breakdown voltage
I
D
=10µA; V
GS
=0 V
(BR)DS
min. 80 V
Drain-source leakage current
V
DS
= 60 V; V
GS
=0 I
DSS
max. 1.0 µA
Gate-source leakage current
V
GS
= 20 V; V
DS
=0 I
GSS
max. 100 nA
Gate threshold voltage
min.
max.
1.5
3.5
V
V
I
D
= 1 mA; V
DS
= V
GS
V
GS(th)
Drain-source ON-resistance (see Fig.4)
typ.
max.
7
10
Ω
Ω
I
D
= 150 mA; V
GS
=5 V R
DS(on)
Transfer admittance
I
D
= 200 mA; V
DS
=5 V Y
fs
typ. 150 mS
Input capacitance at f = 1 MHz
typ.
max.
15
30
pF
pF
V
DS
= 10 V; V
GS
=0 C
iss
Output capacitance at f = 1 MHz
typ.
max.
13
20
pF
pF
V
DS
= 10 V; V
GS
=0 C
oss
Feedback capacitance at f = 1 MHz
typ.
max.
3
6
pF
pF
V
DS
= 10 V; V
GS
=0 C
rss
Switching times (see Figs 2 and 3)
typ.
max.
4
10
ns
ns
I
D
= 200 mA; V
DS
= 50 V; V
GS
= 0 to 10 V t
on
t
off
typ.
max.
4
10
ns
ns
April 1995 5
Philips Semiconductors Product specification
N-channel vertical D-MOS transistor BST72A
Fig.2 Switching times test circuit.
handbook, halfpage
MSA631
50 Ω
V
DD
= 50 V
I
D
10 V
0 V
Fig.3 Input and output waveforms.
handbook, halfpage
MBB692
10 %
90 %
90 %
10 %
t
on
t
off
OUTPUT
INPUT
Fig.4 T
j
=25°C; typical values.
handbook, halfpage
100 2
I
D
(mA)
R
DSon
(Ω)
468
10
3
10
2
10
MDA762
V
GS
= 10 V
8 V
6 V
5 V
Fig.5 T
j
=25°C; typical values.
handbook, halfpage
010
1
0
0.2
0.4
0.6
0.8
246
I
D
(A)
8
MDA732
V
GS
(V)
V
DS
= 10 V
5 V
April 1995 6
Philips Semiconductors Product specification
N-channel vertical D-MOS transistor BST72A
Fig.6 T
j
=25°C; typical values.
handbook, halfpage
010
1
0
0.2
0.4
0.6
0.8
246
I
D
(A)
8
MDA763
V
DS
(V)
V
GS
= 10 V
5 V
6 V
7 V
8 V
9 V
3 V
4 V
Fig.7 Power derating curve.
handbook,
0 50 100 200
1
0
0.8
150
0.6
0.4
0.2
MDA690
P
tot
(W)
T
amb
(°C)
Fig.8
typ. values at 150 mA/5 V.
k
R
DS on
at T
j
R
DS on
at 25 °C
------------------------------------------
;=
handbook, halfpage
−50 0 50
k
T
j
(°C)
150
3
0.5
2.5
100
2
1.5
1
MDA735
Fig.9
V
GS(th)
at 1 mA; typical values.
k
V
GS th()
at T
j
V
GS th()
at 25 °C
---------------------------------------------
;=
handbook, halfpage
−50 0 50
k
T
j
(°C)
150
1.2
0.7
1.1
100
1
0.9
0.8
MDA736
P1-P3P4-P6P7-P9P10-P12

BST72A,112

Mfr. #:
Buy BST72A,112
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 100V 190MA SOT54
Lifecycle:
New from this manufacturer.
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