1N6379RL4

© Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 5
1 Publication Order Number:
1N6373/D
1N6373 - 1N6381 Series
(ICTE-5 - ICTE-36)
1500 Watt Peak Power
Mosorbt Zener Transient
Voltage Suppressors
Unidirectional*
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high-energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ONSemiconductor's exclusive, cost‐effective, highly reliable
Surmetict axial leaded package and are ideally‐suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Specification Features
Working Peak Reverse Voltage Range - 5.0 V to 45 V
Peak Power - 1500 Watts @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 mA Above 10 V
Response Time is Typically < 1 ns
Pb-Free Packages are Available*
Mechanical Characteristics
CASE:
Void‐free, transfer‐molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
260°C, 1/16 from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
AXIAL LEAD
CASE 41A
PLASTIC
Cathode Anode
MARKING DIAGRAMS
A = Assembly Location
1N63xx = JEDEC Device Code
ICTE-xx = ON Device Code
YY = Year
WW = Work Week
G = Pb-Free Package
A
1N
63xx
YYWWG
G
Device Package Shipping
ORDERING INFORMATION
1N63xxRL4, G Axial Lead
(Pb-Free)
1500/Tape & Reel
ICTE-xx, G Axial Lead
(Pb-Free)
500 Units/Box
ICTE-xxRL4, G Axial Lead
(Pb-Free)
1500/Tape & Reel
A
ICTE
-xx
YYWWG
G
(Note: Microdot may be in either location)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1N63xx, G Axial Lead
(Pb-Free)
500 Units/Box
Uni-Directional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
1N6373 - 1N6381 Series (ICTE-5 - ICTE-36)
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation (Note 1) @ T
L
25°C P
PK
1500 W
Steady State Power Dissipation @ T
L
75°C, Lead Length = 3/8
Derated above T
L
= 75°C
P
D
5.0
20
W
mW/°C
Thermal Resistance, Junction-to-Lead
R
q
JL
20 °C/W
Forward Surge Current (Note 2) @ T
A
= 25°C I
FSM
200 A
Operating and Storage Temperature Range T
J
, T
stg
-65 to +175 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse per Figure 5 and derated above T
A
= 25°C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3) = 100 A)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
QV
BR
Maximum Temperature Variation of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3) = 100 A)
JEDEC
Device
(ON Device)
Device
Marking
V
RWM
(Note 4)
I
R
@
V
RWM
Breakdown Voltage V
C
@ I
PP
(Note 6) V
C
(Volts) (Note 6)
QV
BR
V
BR
(Note 5) (Volts) @ I
T
V
C
I
PP
@ I
PP
=
1 A
@ I
PP
=
10 A
(Volts)
(mA)
Min Nom Max (mA) (Volts) (A) (mV/°C)
1N6373, G 1N6373 5.0 300 6.0 - - 1.0 9.4 160 7.1 7.5 4.0
1N6374, G 1N6374 8.0 25 9.4 - - 1.0 15 100 11.3 11.5 8.0
1N6375, G 1N6375 10 2.0 11.7 - - 1.0 16.7 90 13.7 14.1 12
1N6376, G 1N6376 12 2.0 14.1 - - 1.0 21.2 70 16.1 16.5 14
1N6377, G 1N6377 15 2.0 17.6 - - 1.0 25 60 20.1 20.6 18
1N6380, G 1N6380 36 2.0 42.4 - - 1.0 65.2 23 50.6 54.3 50
1N6381, G 1N6381 45 2.0 52.9 - - 1.0 78.9 19 63.3 70 60
ICTE-5RLG ICTE-5 5.0 300 6.0 - - 1.0 9.4 160 7.1 7.5 4.0
ICTE-10RLG ICTE-10 10 2.0 11.7 - - 1.0 16.7 90 13.7 14.1 8.0
ICTE-12RLG ICTE-12 12 2.0 14.1 - - 1.0 21.2 70 16.1 16.5 12
ICTE-15RLG ICTE-15 15 2.0 17.6 - - 1.0 25 60 20.1 20.6 14
ICTE-18, G ICTE-18 18 2.0 21.2 - - 1.0 30 50 24.2 25.2 18
ICTE-36RLG ICTE-36 36 2.0 42.4 - - 1.0 65.2 23 50.6 54.3 26
3. Square waveform, PW = 8.3 ms, non-repetitive duty cycle.
4. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V
RWM
), which should be equal to or
greater than the dc or continuous peak operating voltage level.
5. V
BR
measured at pulse test current I
T
at an ambient temperature of 25°C and minimum voltage in V
BR
is to be controlled.
6. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
The “G'' suffix indicates Pb-Free package or Pb-Free packages are available.
1N6373 - 1N6381 Series (ICTE-5 - ICTE-36)
http://onsemi.com
3
Figure 1. Pulse Rating Curve
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ T
A
= 25 C°
T
A
, AMBIENT TEMPERATURE (°C)
Figure 2. Pulse Derating Curve
5
4
3
2
1
25 50 75 100 125 150 175 200
P
D
, STEADY STATE POWER DISSIPATION (WATTS)
T
L
, LEAD TEMPERATURE (°C)
3/8
3/8
0
0
100
50
0
01 2 3 4
t, TIME (ms)
, VALUE (%)
t
r
10 ms
t
P
PEAK VALUE - I
PP
HALF VALUE -
I
PP
2
PULSE WIDTH (t
P
) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF I
PP
.
1ms 10ms 100ms
1 ms 10 ms
100
10
1
t
P
, PULSE WIDTH
P
PK
, PEAK POWER (kW)
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5
0.1ms
I
PP
Figure 3. Capacitance versus Breakdown Voltage
Figure 4. Steady State Power Derating Figure 5. Pulse Waveform
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
1 10 100 1000
10,000
1000
100
10
C, CAPACITANCE (pF)
MEASURED @
ZERO BIAS
MEASURED @ V
RWM

1N6379RL4

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
ESD Suppressors / TVS Diodes 25.9V 1500W
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union