LPC2387 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5.1 — 16 October 2013 46 of 66
NXP Semiconductors
LPC2387
Single-chip 16-bit/32-bit MCU
11.4 Flash memory
[1] Number of program/erase cycles.
[2] Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash in blocks of 256 bytes.
Table 12. Dynamic characteristics of flash
T
amb
=
40
C to +85
C, unless otherwise specified; V
DD(3V3)
= 3.0 V to 3.6 V; all voltages are measured with respect to
ground.
Symbol Parameter Conditions Min Typ Max Unit
N
endu
endurance
[1]
10000 100000 - cycles
t
ret
retention time powered; < 100 cycles
[2]
10--years
unpowered; < 100 cycles 20 - - years
t
er
erase time sector or multiple
consecutive sectors
95 100 105 ms
t
prog
programming time
[2]
0.95 1 1.05 ms
LPC2387 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5.1 — 16 October 2013 47 of 66
NXP Semiconductors
LPC2387
Single-chip 16-bit/32-bit MCU
11.5 Timing
Fig 13. Differential data-to-EOP transition skew and EOP width
Fig 14. MISO line set-up time in SSP Master mode
t
su(SPI_MISO)
SCK
shifting edges
MOSI
MISO
002aad326
sampling edges
LPC2387 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5.1 — 16 October 2013 48 of 66
NXP Semiconductors
LPC2387
Single-chip 16-bit/32-bit MCU
12. ADC electrical characteristics
[1] Conditions: V
SSA
=0V, V
DDA
=3.3V.
[2] The ADC is monotonic, there are no missing codes.
[3] The differential linearity error (E
D
) is the difference between the actual step width and the ideal step width. See Figure 15.
[4] The integral non-linearity (E
L(adj)
) is the peak difference between the center of the steps of the actual and the ideal transfer curve after
appropriate adjustment of gain and offset errors. See Figure 15
.
[5] The offset error (E
O
) is the absolute difference between the straight line which fits the actual curve and the straight line which fits the
ideal curve. See Figure 15
.
[6] The gain error (E
G
) is the relative difference in percent between the straight line fitting the actual transfer curve after removing offset
error, and the straight line which fits the ideal transfer curve. See Figure 15
.
[7] The absolute error (E
T
) is the maximum difference between the center of the steps of the actual transfer curve of the non-calibrated
ADC and the ideal transfer curve. See Figure 15
.
[8] See Figure 16
.
Table 13. ADC electrical characteristics
V
DDA
= 2.5 V to 3.6 V; T
amb
=
40
C to +85
C unless otherwise specified; ADC frequency 4.5 MHz.
Symbol Parameter Conditions Min Typ Max Unit
V
IA
analog input voltage 0 - V
DDA
V
C
ia
analog input capacitance - - 1 pF
E
D
differential linearity error
[1][2][3]
--1LSB
E
L(adj)
integral non-linearity
[1][4]
--2LSB
E
O
offset error
[1][5]
--3LSB
E
G
gain error
[1][6]
--0.5 %
E
T
absolute error
[1][7]
--4LSB
R
vsi
voltage source interface
resistance
[8]
--40k

LPC2387FBD100,551

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
ARM Microcontrollers - MCU 16/32 bit micro
Lifecycle:
New from this manufacturer.
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