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NGD8201NT4

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2013
March, 2013 − Rev. 11
1 Publication Order Number:
NGD8201N/D
NGD8201N, NGD8201AN
Ignition IGBT
20 A, 400 V, N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• DPAK Package Offers Smaller Footprint for Increased Board Space
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• These are Pb−Free Devices
Applications
• Ignition Systems
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector−Emitter Voltage V
CES
440 V
Collector−Gate Voltage V
CER
440 V
Gate−Emitter Voltage V
GE
"15 V
Collector Current−Continuous
@ T
C
= 25°C − Pulsed
I
C
20
50
A
DC
A
AC
Continuous Gate Current I
G
1.0 mA
Transient Gate Current
(t ≤ 2 ms, f ≤ 100 Hz)
I
G
20 mA
ESD (Charged−Device Model) ESD 2.0 kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
8.0 kV
ESD (Machine Model) R = 0 W, C = 200 pF
ESD 500 V
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
125
0.83
W
W/°C
Operating & Storage Temperature Range T
J
, T
stg
−55 to +175 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
20 A, 400 V
V
CE(on)
= 1.3 V @
I
C
= 10 A, V
GE
. 4.5 V
C
E
G
R
G
DPAK
CASE 369C
STYLE 7
Device Package Shipping
†
ORDERING INFORMATION
NGD8201NT4G DPAK
(Pb−Free)
2500 / Tape & Reel
MARKING DIAGRAM
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
Y = Year
WW = Work Week
NGD8201x = Device Code
x = N or A
G = Pb−Free Package
YWW
NGD
8201xG
http://onsemi.com
R
GE
NGD8201ANT4G DPAK
(Pb−Free)
2500 / Tape & Reel
1
G
E
CC
NGD8201N, NGD8201AN
http://onsemi.com
2
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ T
J
≤ 175°C)
Characteristic
Symbol Value Unit
Single Pulse Collector−to−Emitter Avalanche Energy
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 16.7 A, R
G
= 1000 W, L = 1.8 mH, Starting T
J
= 25°C
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 14.9 A, R
G
= 1000 W, L = 1.8 mH, Starting T
J
= 150°C
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 14.1 A, R
G
= 1000 W, L = 1.8 mH, Starting T
J
= 175°C
E
AS
250
200
180
mJ
Reverse Avalanche Energy
V
CC
= 100 V, V
GE
= 20 V, Pk I
L
= 25.8 A, L = 6.0 mH, Starting T
J
= 25°C
E
AS(R)
2000
mJ
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
R
q
JC
1.2 °C/W
Thermal Resistance, Junction−to−Ambient (Note 1)
R
q
JA
95 °C/W
Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2) T
L
275 °C
1. When surface mounted to an FR4 board using the minimum recommended pad size (76x76x1.6mm board size, 60 sqmm 1 oz. Copper).
2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
BV
CES
I
C
= 2.0 mA T
J
= −40°C to 175°C 370 395 420
V
I
C
= 10 mA T
J
= −40°C to 175°C 390 415 440
Zero Gate Voltage Collector Current I
CES
V
GE
= 0 V, V
CE
= 15 V T
J
= 25°C 0.1 1.0
mA
V
CE
= 200 V,
V
GE
= 0 V
T
J
= 25°C 0.5 1.5 10 mA
T
J
= 175°C 1.0 25 100*
T
J
= −40°C 0.4 0.8 5.0
Reverse Collector−Emitter Clamp
Voltage
B
VCES(R)
I
C
= −75 mA
T
J
= 25°C 30 35 39
V
T
J
= 175°C 35 39 45*
T
J
= −40°C 30 33 37
Reverse Collector−Emitter Leakage
Current
I
CES(R)
V
CE
= −24 V −
NGD8201N
V
CE
= −24 V −
NGD8201AN
T
J
= 25°C 0.05 0.1 1.0
mA
T
J
= 175°C 1.0 5.0 10
T
J
= −40°C 0.005 0.01 0.1
T
J
= 25°C 0.05 0.2 1.0
T
J
= 175°C 1.0 8.5 25
T
J
= −40°C 0.005 0.025 0.2
Gate−Emitter Clamp Voltage BV
GES
I
G
= "5.0 mA T
J
= −40°C to 175°C 12 12.5 14 V
Gate−Emitter Leakage Current I
GES
V
GE
= "5.0 V T
J
= −40°C to 175°C 200 300 350*
mA
Gate Resistor R
G
T
J
= −40°C to 175°C 70
W
Gate−Emitter Resistor R
GE
T
J
= −40°C to 175°C 14.25 16 25
kW
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GE(th)
I
C
= 1.0 mA, V
GE
= V
CE
T
J
= 25°C 1.5 1.8 2.1
V
T
J
= 175°C 0.7 1.0 1.3
T
J
= −40°C 1.7 2.0 2.3*
Threshold Temperature Coefficient
(Negative)
4.0 4.6 5.2 mV/°C
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
NGD8201N, NGD8201AN
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
Characteristic UnitMaxTypMinTemperatureTest ConditionsSymbol
ON CHARACTERISTICS (Note 3)
Collector−to−Emitter On−Voltage
V
CE(on)
I
C
= 6.5 A, V
GE
= 3.7 V −
NGD8201N
I
C
= 6.5 A, V
GE
= 3.7 V −
NGD8201AN
T
J
= 25°C 0.95 1.15 1.35
V
T
J
= 175°C 0.7 0.95 1.15
T
J
= −40°C 1.0 1.3 1.4
T
J
= 25°C 0.85 1.03 1.35
T
J
= 175°C 0.7 0.9 1.15
T
J
= −40°C 0.9 1.11 1.4
I
C
= 9.0 A, V
GE
= 3.9 V −
NGD8201N
I
C
= 9.0 A, V
GE
= 3.9 V −
NGD8201AN
T
J
= 25°C 0.95 1.25 1.45
T
J
= 175°C 0.8 1.05 1.25
T
J
= −40°C 1.1 1.4 1.5
T
J
= 25°C 0.9 1.11 1.45
T
J
= 175°C 0.8 1.01 1.25
T
J
= −40°C 1.0 1.18 1.5
I
C
= 7.5 A, V
GE
= 4.5 V
T
J
= 25°C 0.85 1.15 1.4
T
J
= 175°C 0.7 0.95 1.2
T
J
= −40°C 1.0 1.3 1.6*
I
C
= 10 A, V
GE
= 4.5 V
T
J
= 25°C 1.0 1.3 1.6
T
J
= 175°C 0.8 1.05 1.4
T
J
= −40°C 1.1 1.4 1.7*
I
C
= 15 A, V
GE
= 4.5 V
T
J
= 25°C 1.15 1.45 1.7
T
J
= 175°C 1.0 1.3 1.55
T
J
= −40°C 1.25 1.55 1.8*
I
C
= 20 A, V
GE
= 4.5 V −
NGD8201N
I
C
= 20 A, V
GE
= 4.5 V −
NGD8201AN
T
J
= 25°C 1.3 1.6 1.9
T
J
= 175°C 1.2 1.5 1.8
T
J
= −40°C 1.4 1.75 2.0
T
J
= 25°C 1.1 1.4 1.9
T
J
= 175°C 1.2 1.5 1.8
T
J
= −40°C 1.3 1.42 2.0
Forward Transconductance gfs I
C
= 6.0 A, V
CE
= 5.0 V T
J
= 25°C 10 18 25 Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
f = 10 kHz, V
CE
= 25 V T
J
= 25°C
1100 1300 1500
pF
Output Capacitance C
OSS
70 80 90
Transfer Capacitance C
RSS
18 20 22
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
P1-P3P4-P6P7-P8

NGD8201NT4

Mfr. #:
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Manufacturer:
ON Semiconductor
Description:
IGBT 440V 20A 125W DPAK
Lifecycle:
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