NGD8201N, NGD8201AN
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Self Clamped Inductive Switching Figure 2. Open Secondary Avalanche Current
vs. Temperature
Figure 3. Collector−to−Emitter Voltage vs.
Junction Temperature
Figure 4. Collector Current vs.
Collector−to−Emitter Voltage
Figure 5. Collector Current vs.
Collector−to−Emitter Voltage
Figure 6. Collector Current vs.
Collector−to−Emitter Voltage
INDUCTOR (mH)
250
068
4
100
50
200
0
400
150
10
T
J
= 25°C
SCIS ENERGY (mJ)
T
J
, JUNCTION TEMPERATURE (°C)
−50 50 75250 100−25
125
10
20
5
15
0
25
30
175
V
CC
= 14 V
V
GE
= 5.0 V
R
G
= 1000 W
L = 10 mH
150
L = 3.0 mH
L = 1.8 mH
I
A
, AVALANCHE CURRENT (A)
1.25
T
J
, JUNCTION TEMPERATURE (°C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
−50 50 75250 100−25 125
0.5
1.5
0.25
1.0
0.0
1.75
2.0
0.75
150
V
GE
= 4.5 V
I
C
= 25 A
I
C
= 20 A
I
C
= 15 A
I
C
= 10 A
I
C
= 7.5 A
0
40
6
10
42
I
C,
COLLECTOR CURRENT (A)
0
60
20
30
50
81357
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
J
= 175°C
V
GE
= 10 V
5 V
4.5 V
4 V
3.5 V
3 V
2.5 V
0
40
6
10
42
I
C,
COLLECTOR CURRENT (A)
0
60
20
30
50
81357
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
J
= −40°C
V
GE
= 10 V
5 V
4.5 V
4 V
3.5 V
3 V
2.5 V
40
10
2
I
C,
COLLECTOR CURRENT (A)
0
60
20
30
50
81357
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
J
= 25°C
V
GE
= 10 V
5 V
4.5 V
4 V
3.5 V
3 V
2.5 V
064
V
CC
= 14 V
V
GE
= 5.0 V
R
G
= 1000 W
350
300
2
T
J
= 175°C
175