PSMN075-100MSE
N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33
designed specifically for PoE applications
26 March 2013 Product data sheet
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1. General description
New standards and proprietary approaches are enabling the next generation of Power-
over-Ethernet (PoE) systems capable of delivering up to 100W to each powered
device (PD). Large screen LCD displays, 3G / 4G / Wi-Fi hot-spots and pan-tilt-zoom
CCTV cameras, for example, are placing increased demands on the power sourcing
equipment (PSE) in terms of “soft-start” procedures, resilience to short-circuits, thermal
management and power density. Part of NXP’s “NextPower Live” MOSFET portfolio,
the PSMN075-100MSE has been designed specifically to compliment the latest PoE
controllers, offering both superior linear mode operation and very low R
DS(on)
in a cost-
effective, industry compatible, LFPAK33 package.
2. Features and benefits
•
Enhanced forward biased safe operating area for superior linear mode operation
•
Low Rdson for low conduction losses
•
Ultra reliable LFPAK33 package – no glue, no wires, 175°C
•
Very low I
DSS
3. Applications
•
IEEE802.3at and proprietary solutions - (type 2)
•
Suitable for PoE applications upto 30W
•
Use PSMN040-100MSE for higher power requirements
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current T
j
= 25 °C; V
GS
= 10 V; Fig. 1 - - 18 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 2 - - 65 W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 5 A; T
j
= 25 °C; Fig. 12 - 57 71 mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
= 10 V; I
D
= 5 A; V
DS
= 50 V;
T
j
25 °C; Fig. 14; Fig. 15
- 5.3 - nC
