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PBSS5480XZ

P1-P3P4-P6P7-P9P10-P12P13-P14
2004 Nov 08 9
NXP Semiconductors Product data sheet
80 V, 4 A
PNP low V
CEsat
(BISS) transistor
PBSS5480X
001aaa757
−1
−10
−1
V
CEsat
(V)
−10
−2
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(3)
(2)
Fig.10 Collector-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= 100 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
001aaa758
−10
−1
−10
−2
−1
V
CEsat
(V)
−10
−3
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(2)
(3)
Fig.11 Collector-emitter saturation voltage as a
function of collector current; typical values.
T
amb
= 25 °C.
(1) I
C
/I
B
= 100.
(2) I
C
/I
B
= 50.
(3) I
C
/I
B
= 10.
001aaa759
−0.4
−0.8
−1.2
V
BEsat
(V)
0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(2)
(3)
Fig.12 Base-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 100 °C.
001aaa760
−0.4
−0.8
−1.2
V
BEon
(V)
0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
Fig.13 Base-emitter turn-on voltage as a function
of collector current; typical values.
T
amb
= 25 °C; V
CE
= −2 V.
2004 Nov 08 10
NXP Semiconductors Product data sheet
80 V, 4 A
PNP low V
CEsat
(BISS) transistor
PBSS5480X
Reference mounting conditions
001aaa234
2.5 mm
5 m
m
1.6 mm
0.5 mm
1 mm
3.96 mm
3 mm
2.5 mm
1 mm
40
m
m
32 mm
Fig.14 FR4, standard footprint.
handbook, halfpage
MLE322
40 mm
32 mm
2.5 mm
10 mm
5 mm
1.6 mm
0.5 mm
1 mm
3.96 mm
10 mm
Fig.15 FR4, mounting pad for collector 1 cm
2
.
001aaa235
2.5 mm
5 m
m
1.6 mm
0.5 mm
1 mm
3.96 mm
30 mm
20
mm
40
m
m
32 mm
Fig.16 FR4, mounting pad for collector 6 cm
2
.
2004 Nov 08 11
NXP Semiconductors Product data sheet
80 V, 4 A
PNP low V
CEsat
(BISS) transistor
PBSS5480X
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
DIMENSIONS (mm are the original dimensions)
SOT89 TO-243 SC-62
04-08-03
06-03-16
w M
e
1
e
E
H
E
B
0 2 4 mm
scale
b
p3
b
p2
b
p1
c
D
L
p
A
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8
9
123
UNIT
A
mm
1.6
1.4
0.48
0.35
c
0.44
0.23
D
4.6
4.4
E
2.6
2.4
H
E
L
p
4.25
3.75
e
3.0
w
0.13
e
1
1.5
1.2
0.8
b
p2
b
p1
0.53
0.40
b
p3
1.8
1.4
P1-P3P4-P6P7-P9P10-P12P13-P14

PBSS5480XZ

Mfr. #:
Buy PBSS5480XZ
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT BL Bipolar Discretes
Lifecycle:
New from this manufacturer.
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