2004 Nov 08 7
NXP Semiconductors Product data sheet
80 V, 4 A
PNP low V
CEsat
(BISS) transistor
PBSS5480X
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= −80 V; I
E
= 0 A − − −100 nA
V
CB
= −80 V; I
E
= 0 A; T
j
= 150 °C − − −50 μA
I
CES
collector-emitter cut-off current V
CE
= −60 V; V
BE
= 0 V − − −100 nA
I
EBO
emitter-base cut-off current V
EB
= −5 V; I
C
= 0 A − − −100 nA
h
FE
DC current gain V
CE
= −2 V; I
C
= −0.5 A 200 300 −
V
CE
= −2 V; I
C
= −1 A; note 1 180 280 −
V
CE
= −2 V; I
C
= −2 A; note 1 150 240 −
V
CE
= −2 V; I
C
= −4 A; note 1 80 150 −
V
CEsat
collector-emitter saturation voltage I
C
= −0.5 A; I
B
= −50 mA − −35 −55 mV
I
C
= −1 A; I
B
= −50 mA − −70 −105 mV
I
C
= −2 A; I
B
= −40 mA − −170 −250 mV
I
C
= −4 A; I
B
= −200 mA; note 1 − −220 −340 mV
I
C
= −5 A; I
B
= −500 mA; note 1 − −250 −380 mV
R
CEsat
equivalent on-resistance I
C
= −5 A; I
B
= −500 mA; note 1 − 50 75 mΩ
V
BEsat
base-emitter saturation voltage I
C
= −0.5 A; I
B
= −50 mA − −770 −850 mV
I
C
= −1 A; I
B
= −50 mA − −810 −900 mV
I
C
= −1 A; I
B
= −100 mA; note 1 − −810 −900 mV
I
C
= −4 A; I
B
= −400 mA; note 1 − −930 −1000 mV
V
BEon
base-emitter turn-on voltage V
CE
= −2 V; I
C
= −2 A − −760 −850 mV
f
T
transition frequency I
C
= −0.1 A; V
CE
= −10 V;
f
= 100 MHz
100 125 − MHz
C
c
collector capacitance V
CB
= −10 V; I
E
= i
e
= 0 A;
f
= 1 MHz
− 60 90 pF
