Not Available for New Designs, Use VS-FA40SA50LC
VS-FA38SA50LCP
www.vishay.com
Vishay Semiconductors
Revision: 08-Aug-13
2
Document Number: 94547
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width 300 μs, duty cycle 2 %
Notes
(1)
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
(2)
Pulse width 300 μs, duty cycle 2 %
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction and storage temperature range T
J
, T
Stg
- 55 - 150 °C
Junction to case R
thJC
- - 0.25
°C/W
Case to heatsink R
thCS
Flat, greased surface - 0.05 -
Weight -30-g
Mounting torque --1.3Nm
Case style SOT-227
ELECTRICAL CHARACTERISTCS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Drain to source breakdown voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 1.0 mA 500 - - V
Breakdown voltage temperature
coefficient
V
(BR)DSS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.66 - V/°C
Static drain to source on-resistance R
DS(on)
(1)
V
GS
= 10 V, I
D
= 23 A - - 0.13
Gate threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.0 - 4.0 V
Forward transconductance g
fs
V
DS
= 25 V, I
D
= 23 A 22 - - S
Drain to source leakage current I
DSS
V
DS
= 500 V, V
GS
= 0 V - - 50
μA
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C - - 500
Gate to source forward leakage
I
GSS
V
GS
= 20 V - - 200
nA
Gate to source reverse leakage V
GS
= - 20 V - - - 200
Total gate charge Q
g
I
D
= 38 A
V
DS
= 400 V
V
GS
= 10 V; see fig. 6 and 13
(1)
- 280 420
nCGate to source charge Q
gs
-3755
Gate to drain ("Miller") charge Q
gd
- 150 220
Turn-on delay time t
d(on)
V
DD
= 250 V
I
D
= 38 A
R
g
= 10
R
D
= 8, see fig. 10
(1)
-42-
ns
Rise time t
r
- 340 -
Turn-off delay time t
d(off)
- 200 -
Fall time t
f
- 330 -
Internal source inductance L
S
Between lead, and center of die
contact
-5.0-nH
Input capacitance C
iss
V
GS
= 0 V
V
DS
= 25 V
f = 1.0 MHz, see fig. 5
- 6900 -
pFOutput capacitance C
oss
- 1600 -
Reverse transfer capacitance C
rss
- 580 -
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Continuous source current
(body diode)
I
S
MOSFET symbol
showing the integral reverse
p-n junction diode.
--38
A
Pulsed source current (body diode) I
SM
(1)
- - 150
Diode forward voltage V
SD
(2)
T
J
= 25 °C, I
S
= 38 A, V
GS
= 0 V - - 1.3 V
Reverse recovery time t
rr
T
J
= 25 °C, I
F
= 38 A; dI/dt = 100 A/μs
(2)
- 830 1300 ns
Reverse recovery charge Q
rr
-1522μC
Forward turn-on time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+ L
D
)
