Not Available for New Designs, Use VS-FA40SA50LC
VS-FA38SA50LCP
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Vishay Semiconductors
Revision: 08-Aug-13
4
Document Number: 94547
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Fig. 7 - Typical Source Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 9 - Basic Gate Charge Waveform
Fig. 10 - Gate Charge Test Circuit
Fig. 11 - Switching Time Test Circuit
Fig. 12 - Switching Time Waveforms
0.1
1
10
100
1000
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
1
10
100
1000
1 10 100 1000 10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
D.U.T.
V
DS
I
D
I
G
3 mA
V
GS
.3 µF
50 KΩ
.2 µF
12 V
Current regulator
Same type as D.U.T.
Current sampling resistors
+
-
Pulse width
≤ 1 µs
Duty factor ≤ 0.1 %
D.U.T.
10 V
+
-
V
DS
R
D
V
DD
R
G
V
GS
V
DS
90%
0%
GS
t
d(on)
t
r
t
d(off)
t
f
