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AUIRLR120N

P1-P3P4-P6P7-P9P10-P10
AUIRLR120N
V
DSS
100V
R
DS(on)
max.
0.185
I
D
10A
Features
Advanced Planar Technology
Logic Level Gate Drive
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of other
applications.
1 2015-12-11
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 10
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 7.0
I
DM
Pulsed Drain Current 35
P
D
@T
C
= 25°C Maximum Power Dissipation 48 W
Linear Derating Factor 0.32 W/°C
V
GS
Gate-to-Source Voltage ± 16 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 85
mJ
I
AR
Avalanche Current 6.0
A
E
AR
Repetitive Avalanche Energy 4.8 mJ
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
dv/dt Peak Diode Recovery 5.0 V/ns
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 3.1
°C/W
R
JA
Junction-to-Ambient ( PCB Mount) ––– 50
R
JA
Junction-to-Ambient ––– 110
D-Pak
AUIRLR120N
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRLR120N D-Pak
Tube 75 AUIRLR120N
Tape and Reel Left 3000 AUIRLR120NTRL
G D S
Gate Drain Source
S
G
D
HEXFET
®
Power MOSFET
AUIRLR120N
2 2015-12-11
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Starting T
J
= 25°C, L = 4.7mH, R
G
= 25, I
AS
= 6.0A (See fig. 12)
I
SD
6.0A, di/dt 340A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width 300
µs; duty cycle 2%.
R
is measured at T
J
approximately 90°C.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
––– ––– 0.185 V
GS
= 10V, I
D
= 6.0A 
––– ––– 0.265 V
GS
= 4.0V, I
D
= 5.0A 
V
GS(th)
Gate Threshold Voltage 1.0 ––– 2.0 V V
DS
= V
GS
, I
D
= 250µA
gfs Forward Trans conductance 3.1 ––– ––– S V
DS
= 25V, I
D
= 6.0A
I
DSS
Drain-to-Source Leakage Current
––– ––– 25
µA
V
DS
= 100V, V
GS
= 0V
––– ––– 250 V
DS
= 80V,V
GS
= 0V,T
J
=150°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
nA
V
GS
= 16V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= - 16V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge ––– ––– 20
nC
I
D
= 6.0A
Q
gs
Gate-to-Source Charge ––– ––– 4.6 V
DS
= 80V
Q
gd
Gate-to-Drain Charge ––– ––– 10
V
GS
= 5.0V, See Fig. 6 &13
t
d(on)
Turn-On Delay Time ––– 4.0 –––
ns
V
DD
= 50V
t
r
Rise Time ––– 35 –––
I
D
= 6.0A
t
d(off)
Turn-Off Delay Time ––– 23 –––
R
G
= 11V
GS
= 5.0V
t
f
Fall Time ––– 22 –––
R
D
= 8.2,See Fig. 10
L
D
Internal Drain Inductance ––– 4.5 –––
nH
Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 –––
from package
and center of die contact
C
iss
Input Capacitance ––– 440 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 97 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 50 –––
ƒ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– 10
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 35
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C,I
S
= 6.0A, V
GS
= 0V 
t
rr
Reverse Recovery Time ––– 110 160 ns
T
J
= 25°C ,I
F
= 6.0A
Q
rr
Reverse Recovery Charge ––– 410 620 nC
di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)

––– ––– 0.225 V
GS
= 5.0V, I
D
= 6.0A 
AUIRLR120N
3 2015-12-11
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 4 Normalized On-Resistance
Vs. Temperature
Fig. 1 Typical Output Characteristics
0.1
1
10
100
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
A
20µs PULSE WIDTH
T = 25°C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
0.1
1
10
100
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
A
20µs PULSE WIDTH
T = 175°C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
J
0.1
1
10
100
246810
T = 25°C
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
T = 175°C
J
A
V = 50V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 10A
D
P1-P3P4-P6P7-P9P10-P10

AUIRLR120N

Mfr. #:
Buy AUIRLR120N
Manufacturer:
Infineon / IR
Description:
MOSFET AUTO 100V 1 N-CH HEXFET 185mOhms
Lifecycle:
New from this manufacturer.
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