AUIRLR120N

P1-P3 P4-P6 P7-P9 P10-P10



AUIRLR120N

4 2015-12-11

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage



Fig 8. Maximum Safe Operating Area

Fig. 7 Typical Source-to-Drain Diode

Forward Voltage

0

200

400

600

800

110100

C, Capacitance (pF)

DS

V , Drain-to-Source Voltage (V)

A

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0

3

6

9

12

15

0 5 10 15 20 25

Q , Total Gate Charge (nC)

G

V , Gate-to-Source Voltage (V)

GS

V = 80V

V = 50V

V = 20V

A

FOR TEST CIRCUIT

SEE FIGURE 13

I = 6.0A

D

DS

DS

DS

0.1

1

10

100

0.4 0.6 0.8 1.0 1.2 1.4

T = 25°C

J

V = 0V

GS

V , Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

SD

A

T = 175°C

J

0.1

1

10

100

1 10 100 1000

V , Drain-to-Source Voltage (V)

DS

I , Drain Current (A)

OPERATION IN THIS AREA LIMITED

BY R

D

DS(on)

10µs

100µs

1ms

10ms

A

T = 25°C

T = 175°C

Single Pulse

C

J



AUIRLR120N

5 2015-12-11

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

0

2

4

6

8

10

25 50 75 100 125 150 175

C

I , Drain Current (Amps)

D

T , Case Temperature (°C)

A

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1

Not es:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0. 50

SINGLE PULSE

(THERMAL RESPONSE)



AUIRLR120N

6 2015-12-11



Fig 12c. Maximum Avalanche Energy

vs. Drain Current

Fig 12a. Unclamped Inductive Test Circuit

Fig 12b. Unclamped Inductive Waveforms

R

G

I

AS

0.01



t

p

D.U.T

L

V

DS

+

-

V

DD

DRIVER

A

15V

20V

t

p

V

(BR)DSS

I

AS

Fig 13b. Gate Charge Test Circuit

Fig 13a. Gate Charge Waveform

Vds

Vgs

Id

Vgs(th)

Qgs1

Qgs2 Qgd Qgodr

0

40

80

120

160

200

25 50 75 100 125 150 175

J

E , Single Pulse Avalanche Energy (mJ)

AS

A

Starting T , Junction Temperature (°C)

I

TOP 2.4A

4.2A

BOTTOM 6.0A

D

P1-P3 P4-P6 P7-P9 P10-P10

AUIRLR120N

Mfr. #:

Manufacturer:

Infineon / IR

Description:

MOSFET AUTO 100V 1 N-CH HEXFET 185mOhms

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet