LT1158
13
1158fb
APPLICATIONS INFORMATION
Low Current Shutdown
The LT1158 may be shutdown to a current level of 2mA by
pulling the enable pin 4 low. In this state both the top and
bottom MOSFETs are actively held off against any transients
which might occur on the output during shutdown. This
is important in applications such as 3-phase DC motor
control when one of the phases is disabled while the other
two are switching.
If zero standby current is required and the load returns to
ground, then a switch can be inserted into the supply path
of the LT1158 as shown in Figure 5. Resistor R
GS
ensures
that the top MOSFET gate discharges, while the voltage
across the bottom MOSFET goes to zero. The voltage drop
across the P-channel supply switch must be less than
300mV, and R
GS
must be 330k or greater for DC operation.
This technique is not recommended for applications which
require the LT1158 V
DS
sensing function.
Figure 5. Adding Zero Current Shutdown
Figure 7. Short-Circuit Protection with Current-Sensing MOSFET
Figure 6. Short-Circuit Protection with Standard MOSFET
Short-Circuit Protection in Bridge Applications
The LT1158 protects the top power MOSFET from output
shorts to ground, or in a full bridge application, shorts
across the load. Both standard 3-lead MOSFETs and cur-
rent-sensing 5-lead MOSFETs can be protected. The bottom
MOSFET is not protected from shorts to supply.
Current is sensed by measuring the voltage across a cur-
rent shunt in the source lead of a standard 3-lead MOSFET
(Figure 6). For the current-sensing MOSFET shown in
Figure 7, the sense resistor is inserted between the sense
and Kelvin leads.
The SENSE
+
and SENSE
PC traces must be routed together
at minimum spacing to prevent stray pickup, and a Kelvin
connection must be used at the current shunt for the 3-lead
MOSFET. Using a twisted pair is the safest approach and
is recommended for sense runs of several inches.
When the voltage across R
SENSE
exceeds 110mV, the
LT1158 FAULT pin begins to conduct, signaling a fault
condition. The current in a short circuit ramps very rapidly,
limited only by the series inductance and ultimately the
MOSFET and shunt resistance. Due to the response time
100k
V
+
V
+
LT1158
VP0300
R
GS
1158 F05
LOAD
GND
TO OTHER
CONTROL
CIRCUITS
CMOS
ON/OFF
100k
V
+
T GATE DR
T GATE FB
T SOURCE
B GATE DR
B GATE FB
2N2222
+
+
T GATE DR
T GATE FB
T SOURCE
SENSE
+
SENSE
FAULT
LT1158
R
SENSE
5V
V
+
1158 F06
10k
+
T GATE DR
T GATE FB
T SOURCE
SENSE
+
SENSE
FAULT
LT1158
5V
V
+
1158 F07
10k
R
SENSE
KELVIN
SENSE
OUTPUT
+
LT1158
14
1158fb
APPLICATIONS INFORMATION
the value of R
SENSE
for the 5-lead MOSFET increases by
the current sensing ratio (typically 1000 – 3000), thus
eliminating the need for a low valued shunt. ΔV is in the
range of 1V to 3V in most applications.
Assuming a dead short, the MOSFET dissipation will rise
to V
SUPPLY
• I
SC
. For example, with a 24V supply and I
SC
= 10A, the dissipation would be 240W. To determine how
long the MOSFET can remain at this dissipation level before
it must be shut down, refer to the SOA curves given in
the MOSFET data sheet. For example, an IRFZ34 would
be safe if shut down within 10ms.
A Tektronix A6303 current probe is highly recommended
for viewing output fault currents.
If Short-Circuit Protection is Not Required
In applications which do not require the current sense
capability of the LT1158, the sense pins 11 and 12 should
both be connected to pin 13, and the FAULT pin 5 left
open. The enable pin 4 may still be used to shut down
the device. Note, however, that when unprotected the top
MOSFET can be easily (and often dramatically) destroyed
by even a momentary short.
Self-Protection with Automatic Restart
When using the current sense circuits of Figures 6 and 7,
local shutdown can be achieved by connecting the FAULT
pin through resistor R
F
to the enable pin as shown in
Figure 9. An optional thermostat mounted to the load or
MOSFET heatsink can also be used to pull enable low.
An internal 25μA current source normally keeps the enable
capacitor CEN charged to the 7.5V clamp voltage (or to V
+
,
for V
+
< 7.5V). When a fault occurs, CEN is discharged to
below the enable low threshold (1.15V typ) which shuts
down both MOSFETs. When the FAULT pin or thermostat
releases, CEN recharges to the upper enable threshold
where restart is attempted. In a sustained short circuit,
FAULT will again pull low and the cycle will repeat until the
short is removed. The time to shut down for a DC input
or thermal fault is given by:
t
SHUTDOWN
= (100 + 0.8R
F
) C
EN
DC input
of the LT1158 current limit loop, an initial current spike of
from 2 to 5 times the fi nal value will be present for a few
μs, followed by an interval in which I
DS
= 0. The current
spike is normally well within the safe operating area (SOA)
of the MOSFET, but can be further reduced with a small
(0.5μH) inductor in series with the output.
Figure 8. Top MOSFET Short-Circuit Turn-On current
5μs/DIV
LT1158 F08
5A/DIV
I
SC
If neither the enable nor input pins are pulled low in
response to the fault indication, the top MOSFET current
will recover to a steady-state value I
SC
regulated by the
LT1158 as shown in Figure 8:
I
SC
=
=
=
()
150mV
R
R
150mV
I
I
r 150mV
R
SENSE
SENSE
SC
SC
SSENSE
2
SENSE
SC
1
150mV
V
R
r 150mV
I
1
=
()
Δ
1150mV
V
sense ratio, V = V
2
Δ
Δ
=
r current
GGS
=−VV
GS T
The time for the current to recover to I
SC
following the
initial current spike is approximately Q
GS
/0.5mA, where
Q
GS
is the MOSFET gate-to-source charge. I
SC
need not
be set higher than the required start-up current for mo-
tors (see Starting High In-Rush Current Loads). Note that
LT1158
15
1158fb
APPLICATIONS INFORMATION
Figure 9. Self-Protection with Auto Restart
t
SHUTDOWN
becomes more diffi cult to analyze when the
output is shorted with a PWM input. This is because the
FAULT pin only conducts when fault currents are actually
present in the MOSFET. FAULT does not conduct while the
input is low in Figures 6 and 7 or during the interval I
DS
=
0 in Figure 8. Thus t
SHUTDOWN
will safely increase when
the duty cycle of the current in the top MOSFET is low,
maintaining the average MOSFET current at a relatively
constant level.
The length of time following shutdown before restart is
attempted is given by:
t
V
A
CC
RESTART EN EN
=
()
15
25
610
4
.
μ
In Figure 9, the top MOSFET would shut down after being
in DC current limit for 0.9ms and try to restart at 60ms
intervals, thus producing a duty cyle of 1.5% in short
circuit. The resulting average top MOSFET dissipation
during a short is easily measured by taking the product of
the supply voltage and the average supply current.
Starting High In-Rush Current Loads
The LT1158 has a V
DS
sensing function which allows more
than I
SC
to fl ow in the top MOSFET providing that the
Note that for the fi rst event only, t
SHUTDOWN
is approximately
twice the above value since C
EN
is being discharged all
the way from its quiescent voltage. Allowable values for
R
F
are from zero to 10k.
SENSE
pin is within 1.2V of supply. Under these condi-
tions the current is limited only by the R
DS(ON)
in series
with R
SENSE
. For a 5-lead MOSFET the current is limited
by R
DS(ON)
alone, since R
SENSE
is not in the output path
(see Figure 7). Again adjusting R
DS(ON)
for temperature,
the worst-case start currents are:
I
V
RR
START
DS ON
SENSE
=
+
()
+
()
12
1
.
3-Lead MOSFET
II
V
R
START
DS ON
=
+
()
()
12
1
.
5-Lead MOSFET
Properly sizing the MOSFET for I
START
allows inductive
loads with long time constants, such as motors with high
mechanical inertia, to be started.
Returning to the example used in Power MOSFET Selec-
tion, an IRFZ34 (R
DS(ON)
= 0.05Ω max) was selected for
operation at 5A. If the short-circuit current is also set at 5A,
what start current can be supported? From the equation
for R
SENSE
, a 0.03Ω shunt would be required, allowing
the worst-case start current to be calculated:
I
V
A
START
=
()
+
=
12
17 005 003
10
.
.. .ΩΩ
This calculation gives the minimum current which could
be delivered with the IRFZ34 at T
J
= 125°C without activat-
ing the FAULT pin on the LT1158. If more start current is
required, using an IRFZ44 (R
DS(ON)
= 0.028Ω max) would
increase I
START
to over 15A at T
J
= 110°C, even though
the short-circuit current remains at 5A.
In order for the V
DS
sensing function to work properly, the
supply pins for the LT1158 must be connected at the drain
of the top MOSFET, which must be properly decoupled
(see Ugly Transient Issues).
Driving Lamps
Incandescent lamps represent a challenging load because
they have much in common with a short circuit when cold.
The top gate driver in the LT1158 can be confi gured to turn
on large lamps while still protecting the power MOSFET
FAULT
LT1158
C
EN
F
1158 F09
R
F
1k
7.5V
1.15V
ENABLE
OPTIONAL THERMOSTAT
CLOSE ON RISE
AIRPAX #67FXXX
25μA
7.5V
+

LT1158ISW#PBF

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Gate Drivers Half Bridge N-Ch Pwr MOSFET Drvr
Lifecycle:
New from this manufacturer.
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