BSS315P
OptiMOS™-P 2 Small-Signal-Transistor
Features
• P-channel
• Enhancement mode
•Logic level (4.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
•100% lead-free; RoHS compliant
•Halogen-free according to AEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
A
=25 °C
-1.5 A
T
A
=70 °C
-1.18
Pulsed drain current
I
D,pulse
T
A
=25 °C
-6
Avalanche energy, single pulse
E
AS
I
D
=-1.5 A, R
GS
=25 Ω
11 mJ
Reverse diode dv /dt dv /dt
I
D
=-1.5 A,
V
DS
=-16V,
di /dt=-200A/µs,
T
j,max
=150 °C
6 kV/µs
Gate source voltage
V
GS
±20 V
Power dissipation
1)
P
tot
T
A
=25 °C
W
Operating and storage temperature
T
j
, T
stg
-55 ... 150 °C
ESD Class JESD22-A114 -HBM 0 (<250V) V
Soldering Temperature 260 °C °C
IEC climatic category; DIN IEC 68-1 55/150/56 °C
Value
0.5
PG-SOT-23
3
1
Type Package Tape and Reel Information Marking Lead Free Packing
BSS315P PG-SOT23 H6327: 3000 pcs/ reel YCs Yes Non dry
2
V
DS
30 V
R
DS(on),max
V
GS
=10 V 150
mΩ
V
GS
=4.5 V 270
I
D
-1.5 A
Product Summary
Rev 2.3 page 1 2011-07-06
