BSS315PH6327XTSA1

BSS315P
13 Avalanche characteristics 14 Typ. gate charge
I
AS
=f(t
AV
); R
GS
=25 Ω
V
GS
=f(Q
gate
); I
D
=-1.5 A pulsed
parameter: T
j(start)
parameter: V
DD
15 Drain-source breakdown voltage 16 Gate charge waveforms
V
BR(DSS)
=f(T
j
); I
D
=250 µA
25
26
27
28
29
30
31
32
33
34
35
36
-60 -20 20 60 100 140
T
j
[°C]
V
BR(DSS)
[V]
6 V
15 V
24 V
0
1
2
3
4
5
6
7
8
01234
Q
gate
[nC]
V
GS
[V]
25 °C
100 °C
125 °C
10
3
10
2
10
1
10
0
10
1
10
0
10
-1
t
AV
[µs]
I
AV
[A]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
Rev 2.3 page 7 2011-07-06
BSS315P
SOT23
Package Outline:
Footprint: Packaging:
Rev 2.3 page 8 2011-07-06
BSS315P
Published by
Infineon Technologies AG
81726 Munich, Germany
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Rev 2.3 page 9 2011-07-06

BSS315PH6327XTSA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET P-Ch -30V -1.5A SOT-23-3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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