IRGB/S/SL6B60KPbF
2 www.irf.com
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Ref.Fig.
5, 6,7
8,9,10
8,9,10
11
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 ––– ––– V V
GE
= 0V, I
C
= 500µA
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage ––– 0.3 ––– V/°C V
GE
= 0V, I
C
= 1.0mA, (25°C-150°C)
V
CE(on)
Collector-to-Emitter Saturation Voltage 1.5 1.80 2.20 V I
C
= 5.0A, V
GE
= 15V
––– 2.20 2.50 I
C
= 5.0A,V
GE
= 15V, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.5 4.5 5.5 V V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C V
CE
= V
GE
, I
C
= 1.0mA, (25°C-150°C)
g
fe
Forward Transconductance ––– 3.0 ––– S V
CE
= 50V, I
C
= 5.0A, PW=80µs
I
CES
Zero Gate Voltage Collector Current ––– 1.0 150 µA V
GE
= 0V, V
CE
= 600V
––– 200 500 V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current ––– ––– ±100 nA V
GE
= ±20V
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) ––– 18.2 ––– I
C
= 5.0A
Qge Gate - Emitter Charge (turn-on) ––– 1.9 ––– nC V
CC
= 400V
Qgc Gate - Collector Charge (turn-on) ––– 9.2 ––– V
GE
= 15V
E
on
Turn-On Switching Loss ––– 110 210 µJ I
C
= 5.0A, V
CC
= 400V
E
off
Turn-Off Switching Loss ––– 135 245 V
GE
= 15V,R
G
= 100Ω, L =1.4mH
E
tot
Total Switching Loss ––– 245 455 Ls = 150nH T
J
= 25°C
t
d(on)
Turn-On Delay Time ––– 25 34 I
C
= 5.0A, V
CC
= 400V
t
r
Rise Time ––– 17 26 V
GE
= 15V, R
G
= 100Ω L =1.4mH
t
d(off)
Turn-Off Delay Time ––– 215 230 ns Ls = 150nH, T
J
= 25°C
t
f
Fall Time ––– 13.2 22
E
on
Turn-On Switching Loss ––– 150 260 I
C
= 5.0A, V
CC
= 400V
E
off
Turn-Off Switching Loss ––– 190 300 µJ V
GE
= 15V,R
G
= 100Ω, L =1.4mH
E
tot
Total Switching Loss ––– 340 560 Ls = 150nH T
J
= 150°C
t
d(on)
Turn-On Delay Time ––– 28 37 I
C
= 5.0A, V
CC
= 400V
t
r
Rise Time ––– 17 26 V
GE
= 15V, R
G
= 100Ω L =1.4mH
t
d(off)
Turn-Off Delay Time ––– 240 255 ns Ls = 150nH, T
J
= 150°C
t
f
Fall Time ––– 18 27
C
ies
Input Capacitance ––– 290 ––– V
GE
= 0V
C
oes
Output Capacitance ––– 34 ––– pF V
CC
= 30V
C
res
Reverse Transfer Capacitance ––– 10 ––– f = 1.0MHz
T
J
= 150°C, I
C
= 26A, Vp =600V
V
CC
= 500V, V
GE
=+15V to 0V,
µs T
J
= 150°C, Vp =600V, R
G
= 100Ω
V
CC
= 360V, V
GE
= +15V to 0V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
RBSOA Reverse Bias Safe Operting Area FULL SQUARE
SCSOA Short Circuit Safe Operting Area 10 ––– –––
Ref.Fig.
17
CT1
CT4
CT4
12,14
WF1WF2
4
CT2
CT3
WF3
CT4
R
G
= 100Ω
13, 15
CT4
WF1
WF2
Note to are on page 13
16
