IRGB/S/SL60B60KPbF
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Fig. 17 - Typical Gate Charge
vs. V
GE
I
CE
= 5.0A; L = 600µH
Fig. 16- Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
1 10 100
V
CE
(V)
1
10
100
1000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
0 5 10 15 20
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
(
V
)
300V
400V
Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.708 0.00022
0.447 0.00089
0.219 0.01037
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci= i/Ri
Ci= τi/Ri
IRGB/S/SL6B60KPbF
8 www.irf.com
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
1K
VCC
DUT
0
L
Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
L
Rg
VCC
diode clamp /
DUT
DUT /
DRIVER
- 5V
Rg
VCC
DUT
R =
V
CC
I
CM
L
Rg
80 V
DUT
480V
+
-
DC
Driver
DUT
360V
IRGB/S/SL60B60KPbF
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-50
0
50
100
150
200
250
300
350
400
450
-0.20 0.30 0.80
time(µs)
V
CE
(V)
-1
0
1
2
3
4
5
6
7
8
9
I
CE
(A)
90% I
CE
5% V
CE
5% I
CE
Eoff Loss
tf
-100
0
100
200
300
400
500
16.00 16.10 16.20 16.30 16.40
time (µs)
V
CE
(V)
-5
0
5
10
15
20
25
I
CE
(A)
TEST CURRENT
90% test current
5% V
CE
10% test current
tr
Eon Loss
0
100
200
300
400
500
-5.00 0.00 5.00 10.00 15.00
time (µS)
V
CE
(V)
0
10
20
30
40
50
I
CE
(A)
V
CE
I
CE
Fig. WF1- Typ. Turn-off Loss Waveform
@ T
J
= 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform
@ T
J
= 150°C using Fig. CT.4
Fig. WF3- Typ. S.C Waveform
@ T
C
= 150°C using Fig. CT.3

IRGS6B60KTRLPBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 600V 7AD2PAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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