©2004 Fairchild Semiconductor Corporation HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1
HGTP20N36G3VL,HGT1S20N36G3VLS,
HGT1S20N36G3VL
20A, 360V N-Channel,
Logic Level, Voltage Clamping IGBTs
Packages
JEDEC TO-220AB
JEDEC TO-263AB
JEDEC TO-262AA
Symbol
E
C
G
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
E
G
COLLECTOR
(FLANGE)
E
C
G
GATE
R
2
R
1
COLLECTOR
EMITTER
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
•T
J
= 175
o
C
• Ignition Energy Capable
Description
This N-Channel IGBT is a MOS gated, logic level device which is
intended to be used as an ignition coil driver in automotive ignition
circuits. Unique features include an active voltage clamp between
the collector and the gate which provides Self Clamped Inductive
Switching (SCIS) capability in ignition circuits. Internal diodes pro-
vide ESD protection for the logic level gate. Both a series resistor
and a shunt resistor are provided in the gate circuit
.
The development type number for this device is TA49296.
PACKAGING
PART NUMBER PACKAGE BRAND
HGTP20N36G3VL TO-220AB 20N36GVL
HGT1S20N36G3VL TO-262AA 20N36GVL
HGT1S20N36G3VLS TO-263AB 20N36GVL
March 2004
Absolute Maximum Ratings T
C
= +25
o
C, Unless Otherwise Specified
HGTP20N36G3VL
HGT1S20N36G3VL
HGT1S20N36G3VLS UNITS
Collector-Emitter Bkdn Voltage At 10mA, R
GE
= 1kΩ. . . . . . . . . . . . . . . . . . . . . . . BV
CER
395 V
Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
ECS
28 V
Collector Current Continuous At V
GE
= 5.0V, T
C
= +25
o
C, Figure 7 . . . . . . . . . . . . . I
C25
37.7 A
At V
GE
= 5.0V, T
C
= +100
o
C . . . . . . . . . . . . . . . . . . . .I
C100
26 A
Gate-Emitter-Voltage (Note). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
±10 V
Inductive Switching Current At L = 2.3mH, T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . .I
SCIS
21 A
At L = 2.3mH, T
C
= +150
o
C . . . . . . . . . . . . . . . . . . . . . .I
SCIS
16 A
Collector to Emitter Avalanche Energy At L = 2.3mH, T
C
= +25
o
C . . . . . . . . . . . . . . E
AS
500 mJ
Power Dissipation Total At T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
150 W
Power Dissipation Derating T
C
> +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
-40 to +175
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
260
o
C
Electrostatic Voltage at 100pF, 1500
Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD 6 KV
NOTE: May be exceeded if I
GEM
is limited to 10mA.
