©2004 Fairchild Semiconductor Corporation HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1
Specifications HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS
FIGURE 13. SELF CLAMPED INDUCTIVE SWITCH-
ING CURRENT vs TIME IN CLAMP
FIGURE 14. CAPACITANCE vs
COLLECTOR-EMITTER VOLTAGE
FIGURE 13. GATE CHARGE FIGURE 14. NORMALIZED TRANSIENT THERMAL
IMPEDANCE, JUNCTION TO CASE
FIGURE 15.BREAKDOWN VOLTAGE vs GATE -
EMITTER RESISTANCE
Typical Performance Curves (Continued)
0 100 200 300 350 400
50
30
10
I
CE
, COLLECTOR-EMITTER CURRENT (A)
40
20
0
+25
o
C
+150
o
C
60
t
CLP
, TIME IN CLAMP (µS)
50 150 250
C, CAPACITANCE (pF)
0
5
10 15
20
25
200
400
600
800
1000
1200
1400
1600
FREQUENCY = 1MHz
C
IES
C
OES
C
RES
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
Q
G
, GATE CHARGE (nC)
12
10
8
6
4
2
0
6
5
1
0
4
3
2
010
20
30
40
V
GE
, GATE-EMITTER VOLTAGE (V)
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
V
CE
= 4V
V
CE
= 8V
V
CE
= 12V
I
G
REF = 1.022mA, R
L
= 1.2Ω, T
C
= +25
o
C
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θJC
X R
θJC
) + T
C
10
-2
10
-1
10
0
10
-5
10
-3
10
-1
10
1
t
1
, RECTANGULAR PULSE DURATION (s)
0.5
0.1
SINGLE PULSE
0.01
0.05
0.2
Z
θ
JC
, NORMALIZED THERMAL RESPONSE
0.02
10
0
10
-4
10
-2
02 4 6 810
335
340
345
350
R
GE
, GATE-TO-EMITTER RESISTANCE (KΩ)
BV
CER
, COLLECTOR-EMITTER
I
CER
= 10mA
T
C
= 25
o
C AND 175
o
C
BREAKDOWN VOLTAGE (V)
