NXP Semiconductors
PMEG6030ELP
60 V, 3 A low leakage current Schottky barrier rectifier
PMEG6030ELP All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 7 May 2015 3 / 15
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage T
j
= 25 °C - 60 V
I
F
forward current T
sp
= 150 °C; δ = 1 - 4.2 A
δ = 0.5; f = 20 kHz; T
amb
≤ 75 °C;
square wave
[1] - 3 AI
F(AV)
average forward current
δ = 0.5; f = 20 kHz; T
sp
≤ 155 °C;
square wave
- 3 A
I
FSM
non-repetitive peak forward
current
t
p
= 8 ms; T
j(init)
= 25 °C; square wave - 70 A
[2] - 750 mW
[3] - 1250 mW
P
tot
total power dissipation T
amb
≤ 25 °C
[1] - 2500 mW
T
j
junction temperature - 175 °C
T
amb
ambient temperature -55 175 °C
T
stg
storage temperature -65 175 °C
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1][2] - - 200 K/W
[1][3] - - 120 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[1][4] - - 60 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
[5] - - 12 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[4] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
[5] Soldering point of cathode tab.
