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PMEG6030ELPX

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
NXP Semiconductors
PMEG6030ELP
60 V, 3 A low leakage current Schottky barrier rectifier
PMEG6030ELP All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 7 May 2015 6 / 15
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)R
reverse breakdown
voltage
I
R
= 1 mA; T
j
= 25 °C; t
p
= 300 µs;
δ = 0.02
60 - - V
I
F
= 0.1 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 440 500 mV
I
F
= 0.5 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 495 555 mV
I
F
= 0.7 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 505 565 mV
I
F
= 1 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 525 585 mV
I
F
= 1.6 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 550 620 mV
I
F
= 2 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 570 640 mV
I
F
= 3 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 600 670 mV
V
F
forward voltage
I
F
= 3 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 125 °C
- 510 630 mV
V
R
= 10 V; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 20 - nA
V
R
= 40 V; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 80 - nA
V
R
= 60 V; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 340 1000 nA
I
R
reverse current
V
R
= 60 V; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 125 °C
- 440 2100 µA
V
R
= 1 V; f = 1 MHz; T
j
= 25 °C - 315 - pF
V
R
= 4 V; f = 1 MHz; T
j
= 25 °C - 190 - pF
C
d
diode capacitance
V
R
= 10 V; f = 1 MHz; T
j
= 25 °C - 125 - pF
t
rr
reverse recovery time I
F
= 0.5 A; I
R
= 0.5 A; I
R(meas)
= 0.1 A;
T
j
= 25 °C
- 12 - ns
V
FRM
peak forward recovery
voltage
I
F
= 0.5 A; dI
F
/dt = 20 A/µs; T
j
= 25 °C - 560 - mV
NXP Semiconductors
PMEG6030ELP
60 V, 3 A low leakage current Schottky barrier rectifier
PMEG6030ELP All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 7 May 2015 7 / 15
aaa-017365
10
-2
10
-3
1
10
-1
10
I
F
(A)
10
-4
V
F
(V)
0.0 0.80.60.2 0.4
(1)
(2)
(3)
(5)(4) (6)
(1) T
j
= 175 °C
(2) T
j
= 150 °C
(3) T
j
= 125 °C
(4) T
j
= 85 °C
(5) T
j
= 25 °C
(6) T
j
= −40 °C
Fig. 4. Forward current as a function of forward
voltage; typical values
10
-2
10
-3
10
-4
10
-5
10
-7
10
-6
10
-8
10
-9
10
-10
10
-11
I
R
(A)
10
-12
V
R
(V)
0 604020
aaa-017366
(1)
(2)
(3)
(5)
(4)
(6)
(1) T
j
= 175 °C
(2) T
j
= 150 °C
(3) T
j
= 125 °C
(4) T
j
= 85 °C
(5) T
j
= 25 °C
(6) T
j
= −40 °C
Fig. 5. Reverse current as a function of reverse
voltage; typical values
aaa-017369
V
R
(V)
0 604020
200
300
100
400
500
C
d
(pF)
0
f = 1 MHz; T
amb
= 25 °C
Fig. 6. Diode capacitance as a function of reverse
voltage; typical values
aaa-017370
I
F(AV)
(A)
0.0 4.53.01.5
0.8
1.2
0.4
1.6
2.0
P
F(AV)
(W)
0.0
(1)
(2)
(3)
(4)
T
j
= 175 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig. 7. Average forward power dissipation as a
function of average forward current; typical
values
NXP Semiconductors
PMEG6030ELP
60 V, 3 A low leakage current Schottky barrier rectifier
PMEG6030ELP All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 7 May 2015 8 / 15
aaa-017371
V
R
(V)
0 604020
40
60
20
80
100
P
R(AV)
(mW)
0
(1)
(2)
(3)
(4)
T
j
= 150 °C
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 8. Average reverse power dissipation as a
function of reverse voltage; typical values
T
amb
(°C)
0 20015050 100
aaa-017372
1
2
3
I
F(AV)
(A)
0
(1)
(2)
(3)
(4)
FR4 PCB, standard footprint
T
j
= 175 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 9. Average forward current as a function of
ambient temperature; typical values
T
amb
(°C)
0 20015050 100
aaa-017373
1.5
3.0
4.5
I
F(AV)
(A)
0.0
(1)
(2)
(3)
(4)
FR4 PCB, mounting pad for cathode 1 cm
2
T
j
= 175 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 10. Average forward current as a function of
ambient temperature; typical values
T
amb
(°C)
0 20015050 100
aaa-017374
1.5
3.0
4.5
I
F(AV)
(A)
0.0
(1)
(2)
(3)
(4)
Ceramic PCB, Al
2
O
3
, standard footprint
T
j
= 175 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 11. Average forward current as a function of
ambient temperature; typical values
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PMEG6030ELPX

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Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers 3A Schottky Barrier Rectifier
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