BC817-25QA_40QA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 3 September 2013 3 of 15
NXP Semiconductors
BC817-25QA; BC817-40QA
45 V, 500 mA NPN general-purpose transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 1 cm
2
.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated mounting pad for collector 1 cm
2
.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 45 V
V
EBO
emitter-base voltage open collector - 5 V
I
C
collector current - 500 mA
I
CM
peak collector current single pulse; t
p
1ms - 1 A
I
BM
peak base current single pulse; t
p
1ms - 200 mA
P
tot
total power dissipation T
amb
25 C
[1]
-300mW
[2]
-500mW
[3]
-560mW
[4]
900 mW
T
j
junction temperature - 150 C
T
amb
ambient temperature 55 +150 C
T
stg
storage temperature 65 +150 C
