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PTMC210404MD-V1-R5

P1-P3P4-P6P7-P9
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-05-21
Wideband LDMOS Two-stage Integrated Power Amplifier
2 x 20 W, 28 V, 1805 – 2200 MHz
Features
• On-chip matching for broadband operation
• Typical pulsed CW performance, 1990 MHz, 28 V,
combined outputs
- Output power at P
1dB
= 37 W
- Linear Gain = 31.5 dB
- Efficiency = 53.1%
• Capable of handling 10:1 VSWR @28 V, 37 W (CW)
output power
• Integrated ESD protection
• Human Body Model Class 1B (per ANSI/ESDA/
JEDEC JS-001)
• Integrated temperature compensation
• Pb-free and RoHS compliant
Description
The PTMC210204MD is a wideband, two-stage LDMOS integrated
amplifier intended for wideband driver applications. It has internal
matching for operation from 1805 to 2200 MHz. It features on-chip
matching high efficiency, and dual independent outputs with 20 W of
output power each. It is available in a 14-lead plastic overmold pack-
age with gull wing leads.
RF Characteristics
Single-carrier WCDMA Specifications (tested in Wolfspeed production test fixture)
V
DD
= 28 V, I
DQ1(A+B)
= 63 mA, I
DQ2(A+B)
= 219 mA, P
OUT
= 5 W avg, ƒ = 1990 MHz, 3GPP WCDMA signal, channel band-
width = 3.84 MHz, peak/average = 7.5 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Linear Gain G
ps
29 30 — dB
Power Added Efficiency PAE 17.5 18.5 — %
Adjacent Channel Power Ratio ACPR — –49.5 –47.5 dBc
Output PAR @ 0.01% CCDF OPAR 7.0 7.2 — dB
0
15
30
45
60
0
10
20
30
40
32 37 42 47
Efficiency (%)
Peak/Average Ratio, Gain (dB)
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ1
= 124mA, I
DQ2
= 438 mA,
ƒ = 1990 MHz 3GPP WCDMA signal,
PAR = 7.50 dB, 3.84 MHz BW
PAR @ 0.01%
CCDF
Gain
Efficiency
ptmc210404md-g1
Package PG-HB1DSO-14-1
(formed leads)
PTMC210404MD
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Rev. 03, 2018-05-21
2
PTMC210404MD
DC Characteristics
Stage 1 Conditions Symbol Min Typ Max Unit
Drain Leakage Current V
DS
= 28 V, V
GS
= 0 V I
DSS
— — 0.1 µA
V
DS
= 60 V, V
GS
= 0 V I
DSS
— — 1 µA
Gate Leakage Current V
GS
= 1 V, V
DS
= 0 V I
GSS
— — 0.1 µA
On-state Resistance V
GS
= 10 V, V
DS
= 0.1 V R
DS(on)
— 1.5 — Ω
Operating Gate Voltage V
DS
= 28 V, I
DQ1
= 63 mA V
GS1
— 2.7 — V
Fixture Operating Gate Voltage V
DS
= 28 V, I
DQ1
= 63 mA V
GS1
— 4.9 — V
Stage 2 Conditions Symbol Min Typ Max Unit
Drain-source Breakdown Voltage V
GS
= 0 V, I
DS
= 10 mA V
BR(DSS)
64 — — V
Drain Leakage Current V
DS
= 28 V, V
GS
= 0 V I
DSS
— — 0.1 µA
V
DS
= 60 V, V
GS
= 0 V I
DSS
— — 1 µA
Gate Leakage Current V
GS
= 1 V, V
DS
= 0 V I
GSS
— — 0.1 µA
On-state Resistance V
GS
= 10 V, V
DS
= 0.1 V R
DS(on)
— 1.5 — Ω
Operating Gate Voltage V
DS
= 28 V, I
DQ2
= 219 mA V
GS2
— 2.7 — V
Fixture Operating Gate Voltage V
DS
= 28 V, I
DQ2
= 219 mA V
GS2
— 4.9 — V
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V
DSS
65 V
Gate-Source Voltage V
GS
–6 to +10 V
Junction Temperature T
J
225 °C
Storage Temperature Range T
STG
–65 to +150 °C
Operating Voltage V
DD
0 to 32 V
Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance Stage 1 (T
CASE
= 70°C, 37 W CW) R
q
JC
6.7 °C/W
Stage 2 (T
CASE
= 70°C, 37 W CW) R
q
JC
1.4 °C/W
Moisture Sensitivity Level
Level Test Standard Package Temperature Unit
3 IPC/JEDEC J-STD-020 260 °C
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Rev. 03, 2018-05-21
3
PTMC210404MD
5
15
25
35
45
55
-65
-55
-45
-35
-25
-15
32 37 42 47
Efficiency(%)
ACP Up & Low (dBc)
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ1
= 124mA, I
DQ2
= 438 mA,
ƒ = 1990 MHz, 3GPP WCDMA signal,
PAR = 7.50 dB, BW = 3.84 MHz
Efficiency
ACP Up
ACP Low
ptmc210404md-g2
0
5
10
15
20
25
3010
15
20
25
30
35
40
1800 1900 2000 2100 2200
Efficiency (%)
Gain (dB)
Frequency (MHz)
Single-carrier WCDMA Broadband
Performance
V
DD
= 28 V, I
DQ1
= 124mA, I
DQ2
= 438 mA,
P
OUT
= 37dBm, 3GPP WCDMA signal,
PAR = 7.50 dB
Efficiency
Gain
ptmc210404md-g3
Ordering Information
Type and Version Order Code Package and Description Shipping
PTMC210404MD V1 R5 PTMC210404MD-V1-R5 PG-HB1DSO-14-1, 14-lead, overmold Tape & Reel, 500 pcs
Evaluation Boards
Order Code Frequency Description
LTN/PTMC210404MD V1 1805 – 2200 MHz Class AB with combined outputs, R04350, 0.508 mm thick
Find Gerber files for these reference fixtures on the Wolfspeed Web site at www.wolfspeed.com/RF
Typical RF Performance (data taken in production test fixture)
P1-P3P4-P6P7-P9

PTMC210404MD-V1-R5

Mfr. #:
Buy PTMC210404MD-V1-R5
Manufacturer:
N/A
Description:
RF Amplifier Power Amplifier
Lifecycle:
New from this manufacturer.
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