August 2007 Rev 1 1/15
Features
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature Size”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
Motor control
High current, switching application
Automotive environment
Figure 1. Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
(1)
1. Current limited by package
STB141NF55 55V <0.008 80A
STB141NF55-1 55V <0.008 80A
STP141NF55 55V <0.008 80A
1
3
1
2
3
1
2
3
D²PAK
TO-220
I²PAK
Table 1. Device summary
Order code Marking Package Packaging
STB141NF55 B141NF55 D²PAK Tape & reel
STB141NF55-1 B141NF55 I²PAK Tube
STP141NF55 P141NF55 TO-220 Tube
STB141NF55 - STB141NF55-1
STP141NF55
N-channel 55V - 0.0065 - 80A - D
2
PAK - I
2
PAK - TO-220
STripFET™ II Power MOSFET
www.st.com
Contents STB141NF55 - STB141NF55-1 - STP141NF55
2/15
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STB141NF55 - STB141NF55-1 - STP141NF55 Electrical ratings
3/15
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 55 V
V
GS
Gate- source voltage ±20 V
I
D
(1)
1. Current limited by package
Drain current (continuous) at T
C
= 25°C 80 A
I
D
(1)
Drain current (continuous) at T
C
= 100°C 80 A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 320 A
P
TOT
Total dissipation at T
C
= 25°C 300 W
Derating factor 2 W/°C
dv/dt
(3)
3. I
SD
< 80A, di/dt < 300A/µs, V
DD
=80%V
(BR)DSS
Peak diode recovery voltage slope 10 V/ns
E
AS
(4)
4. Starting Tj = 25°C, I
D
= 40A, V
DD
= 30V
Single pulse avalance energy 1.3 J
T
stg
Storage temperature
–55 to 175 °C
T
j
Operating junction temperature
Table 2. Thermal data
Symbol Parameter
Value
Unit
TO-220 - I²PAK D²PAK
Rthj-case Thermal resistance junction-case max 0.5 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5
--
°C/W
Rthj-pcb
(1)
1. When mounted on 1 inch², FR4 board, 2 oz Cu
Thermal resistance junction-pcb max -- 35 °C/W
T
l
Maximum lead temperature for soldering
purpose (for 10 sec, 1.6mm from case)
300 °C

STB141NF55

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch, 55V-0.0065ohms 80A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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