Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
STB141NF55
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
Electrical ch
aracteristics
STB141NF55 - STB141NF55-1 - STP141NF55
4/15
2 Electrical
characteristics
(T
CASE
= 25°C unless othe
rwise specified)
T
able 3.
On/off states
Symbol
Parameter
T
est conditions
Min.
T
yp.
Max.
Unit
V
(BR)DSS
Drain-source
breakdown v
oltage
I
D
= 250 µA, V
GS
= 0
55
V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= Max rat
ing
V
DS
= Max rating, T
C
= 125 °C
1
10
µA
µA
I
GSS
Gate-body l
eakage
current (V
DS
= 0)
V
GS
= ±20V
±100
nA
V
GS(th)
Gate threshold v
oltage
V
DS
= V
GS
, I
D
= 250µA
2
3
4
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V
, I
D
= 40 A
0.0065
0.008
Ω
T
able 4.
Dynamic
Symbol
Parameter
T
est conditions
Min.
T
yp.
Max.
Unit
g
fs
(1)
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
F
orward transconductance
V
DS
= 15V
, I
D
= 40 A
100
S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Rev
erse transfer
capacitance
V
DS
= 25V
, f = 1 MHz
V
GS
= 0
5300
1000
290
pF
pF
pF
Q
g
Q
gs
Q
gd
T
otal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 44V
, I
D
= 80A
V
GS
=10V
(see Figure 14)
142
27
55
nC
nC
nC
STB141NF55 - STB141NF55-
1 - STP141NF55
Electrical cha
racteristics
5/15
T
able 5.
Switchi
ng times
Symbol
Parameter
T
est conditions
Min.
T
yp.
Max.
Unit
t
d(on)
t
r
T
urn-on dela
y time
Rise time
V
DD
= 27.5 V
, I
D
= 40A
R
G
=4
.
7
Ω ,
V
GS
= 10V
(see Figure 13)
30
150
ns
ns
t
d(off)
t
f
T
urn-off-delay time
F
a
ll time
V
DD
= 27.5V
, I
D
= 40A,
R
G
=4
.
7
Ω,
V
GS
= 10V
(see Figure 13)
125
45
ns
ns
T
able 6.
Sourc
e drain diode
Symbol
Parameter
T
est conditions
Min.
T
yp.
Max.
Unit
I
SD
I
SDM
(1)
1.
Pulse width limited safe operating area
Source-drain current
Source-drain current (pulsed)
80
320
A
A
V
SD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
F
orward on voltage
I
SD
= 80A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Re
verse reco
v
er
y time
Rev
erse recovery charge
Re
verse reco
v
er
y current
I
SD
= 80A, di/dt = 100 A/µs,
V
DD
= 20V
, T
j
= 150°C
(see Fi
gure 15)
90
275
6.5
ns
nC
A
Electrical ch
aracteristics
STB141NF55 - STB141NF55-1 - STP141NF55
6/15
2.1 Electrical
characteri
stics (curves)
Figure 1.
Safe operat
ing area
Figure 2.
Thermal impedance
Figure 3.
Output charact
eristics
Figure 4.
T
r
ansfer characteristic
s
Figure 5.
T
ransconductance
Figure 6.
Static drain-sou
rce on res
istance
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
STB141NF55
Mfr. #:
Buy STB141NF55
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch, 55V-0.0065ohms 80A
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
STP141NF55
STB141NF55
STB141NF55-1