NXP Semiconductors
BTA425Y-800CT
3Q Hi-Com Triac
BTA425Y-800CT All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 23 June 2014 3 / 12
7. Marking
Table 4. Marking codes
Type number Marking code
BTA425Y-800CT BTA425Y-800CT
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state voltage - 800 V
I
T(RMS)
RMS on-state current full sine wave; T
mb
≤ 101 °C; Fig. 1;
Fig. 2; Fig. 3
- 25 A
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- 250 AI
TSM
non-repetitive peak on-state
current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
- 275 A
I
2
t I
2
t for fusing
t
p
= 10 ms; sine-wave pulse - 312.5
A
2
s
dI
T
/dt rate of rise of on-state current I
T
= 30 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs - 100 A/µs
I
GM
peak gate current - 2 A
P
GM
peak gate power - 5 W
P
G(AV)
average gate power over any 20 ms period - 0.5 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 150 °C
