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BTA425Y-800CTQ

P1-P3P4-P6P7-P9P10-P12P13-P13
NXP Semiconductors
BTA425Y-800CT
3Q Hi-Com Triac
BTA425Y-800CT All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 23 June 2014 6 / 12
10
-4
t
p
(s)
1 1010
-1
10
-3
10
-2
1
10
-1
10
Z
th(j-mb)
(K/W)
10
-2
aaa-012996
t
p
P
t
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Isolation characteristics
Table 7. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
isol(RMS)
RMS isolation voltage from all terminals to external heatsink;
sinusoidal waveform; clean and dust
free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
T
mb
= 25 °C
- - 2500 V
C
isol
isolation capacitance from main terminal 2 to external
heatsink; f = 1 MHz; T
mb
= 25 °C
- 10 - pF
11. Characteristics
Table 8. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
- - 35 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
- - 35 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
- - 35 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 8
- - 70 mAI
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 8
- - 80 mA
NXP Semiconductors
BTA425Y-800CT
3Q Hi-Com Triac
BTA425Y-800CT All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 23 June 2014 7 / 12
Symbol Parameter Conditions Min Typ Max Unit
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 8
- - 70 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 9 - - 50 mA
V
T
on-state voltage I
T
= 35 A; T
j
= 25 °C; Fig. 10 - 1.2 1.5 V
V
D
= 12 V; T
j
= 25 °C; Fig. 11 - 0.9 1.3 VV
GT
gate trigger voltage
V
D
= 400 V; T
j
= 150 °C; Fig. 11 0.2 0.45 - V
I
D
off-state current V
D
= 800 V; T
j
= 150 °C - 0.4 2 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
1000 - - V/µs
dI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 25 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit
13 - - A/ms
T
j
(°C)
-50 1501000 50
1
2
3
0
(1)
(2)
(3)
I
GT
I
GT(25°C)
aaa-012997
(1) T2- G-
(2) T2+ G-
(3) T2+ G+
Fig. 7. Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
-50 1501000 50
1
2
3
0
I
L
I
L(25°C)
aaa-012998
Fig. 8. Normalized latching current as a function of
junction temperature
NXP Semiconductors
BTA425Y-800CT
3Q Hi-Com Triac
BTA425Y-800CT All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 23 June 2014 8 / 12
T
j
(°C)
-50 1501000 50
1
2
3
0
I
H
I
H(25°C)
aaa-012999
Fig. 9. Normalized holding current as a function of
junction temperature
V
T
(V)
0 321
20
10
30
40
I
T
(A)
0
(1)
(2) (3)
aaa-013000
V
o
= 1.072 V; R
s
= 0.010 Ω
(1) T
j
= 150 °C; typical values
(2) T
j
= 150 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage
0.8
1.2
1.6
0.4
T
j
(°C)
-50 1501000 50
V
GT
V
GT(25°C)
aaa-013001
Fig. 11. Normalized gate trigger voltage as a function of junction temperature
P1-P3P4-P6P7-P9P10-P12P13-P13

BTA425Y-800CTQ

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Manufacturer:
WeEn Semiconductors
Description:
Triacs 3Q Hi-Com Triac
Lifecycle:
New from this manufacturer.
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