OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SPL LL90_3

P1-P3P4-P6P7-P8
2017-05-24 1
2017-0 5-24
Hybrid Pulsed Laser Diode with Integrated Driver Stage 70 W Peak Power
Version 1.2
SPL LL90_3
Ordering Information
Features:
• Low cost, small size plastic package
• Integrated FET and capacitors for pulse control
• Strained InAIGaAs/GaAs QW-structures
• High power large-optical-cavity laser structure
• Nanostack laser technology including multiple epitaxially stacked emitters
• The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification
for Automotive Grade Discrete Semiconductors.
• High-speed operation (< 30 ns pulse width)
• Low supply voltage (< 20 V)
Applications
• Range finding
• Security, surveillance
• Illumination, ignition
• Testing and measurement
Notes
Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which
can be hazardous to the human eye. Products which incorporate these devices have to follow the safety
precautions given in IEC 60825-1 "Safety of laser products".
Type: Number of
emitters
Peak wavelength Peak output
power
Ordering Code
λ
peak
P
opt
SPL LL90_3 3 905 70 Q65110A1009
2017-05-24 2
Version 1.2 SPL LL90_3
Maximum Ratings (short time operation / kurzzeitiger Betrieb, T
A
= 25 °C)
Characteristics (T
A
= 25 °C)
Parameter Symbol Values Unit
Peak output power P
peak
80 W
Charge voltage
(V
G
= 15 V)
V
C
20 V
Gate voltage V
G
-20 ... 20 V
Duty cycle dc 0.1 %
Operating temperature T
op
-40 ... 100 °C
Junction temperature
1) page 7
T
j
105 °C
Storage temperature range T
stg
-40 ... 100 °C
Soldering temperature
(t
max
= 10 s)
T
s
260 °C
Parameter Symbol Values Unit
min typ max
Emission wavelength
2) page 7
λ
peak
895 905 915 nm
Spectral width (FWHM)
2) page 7
∆λ 7 nm
Peak output power
2) page 7
P
opt
60 70 80 W
Charge voltage at laser threshold U
C, th
4 4.5 5 V
Pulse width (FWHM)
2) page 7 , 3) page 7
t
P
37 40 43 ns
Rise time
2) page 7 , 3) page 7
t
r
7 10 13 ns
Fall Time
2) page 7 , 3) page 7
t
f
40 45 50 ns
Jitter (regarding trigger signal and optical pulse) t
j
170 500 ps
Aperture size w x h 200
x 10
µm x
µm
Beam divergence (FWHM) parallel to pn-junction
2) page 7
Θ
||
12 15 18 °
Beam divergence (FWHM) perpendicular to
pn-junction
2) page 7
Θ
⊥
27 30 33 °
Temperature coefficient of wavelength ∆λ / ∆T 0.3 0.33 nm / K
Thermal resistance R
th
200 K / W
Switch on gate voltage V
G on
5 V
Version 1.2 SPL LL90_3
2017-05-24 3
Optical Output Power vs. Charge Voltage
P
opt
= f(V
C
), t
p
= 30 ns
Relative Spectral Emission
I
rel
= f(λ), P
opt
= 70 W, t
p
= 30 ns
Far-Field Distribution Parallel to pn-Junction
I
rel
= f(Θ
II
), P
opt
= 70 W, t
p
= 30 ns
Far-Field Distribution Perpendicular to
pn-Junction
I
rel
= f(Θ
⊥
), P
opt
= 70 W, t
p
= 30 ns
0
0
V
P
opt
OHL01909
C
5 10 15 20 25
10
20
30
40
50
60
70
80
90
V
W
1 kHz
25 kHz
860
0
OHL01910
rel
I
λ
880 900 920 nm 940
25
50
75
100
-40
0
OHL01906
rel
I
θ
-30 -20 -10 0 10 20 Deg 40
0.25
0.50
0.75
1.00
-40
0
OHL01907
rel
I
θ
-30 -20 -10 0 10 20 Deg 40
0.25
0.50
0.75
1.00
P1-P3P4-P6P7-P8

SPL LL90_3

Mfr. #:
Buy SPL LL90_3
Manufacturer:
Description:
LASER DIODE 905NM 70W RADIAL
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet