SPL LL90_3

Version 1.2 SPL LL90_3
2017-05-24 7
Glossary
1)
Junction temperature: Limited due to plastic package, not due to laser chip.
2)
Standard operating conditions: > 50 ns pulse width, 1 kHz pulse repetition rate, 18.5 V charge voltage, 15 V
gate voltage and 25 °C ambient temperature. The laser is driven by the MOSFET driver Elantec EL7104C.
3)
Switching speed: Switching speed at gate depends on current and speed, charging the gate capacitance (typ.
300 pF) of the internal transistor. Reduced pulse widths, rise and fall times occur at trigger pulse widths < 50 ns.
This also reduces the optical peak power.
2017-05-24 8
Version 1.2 SPL LL90_3
Published by OSRAM Opto Semiconductors GmbH
Leibnizstraße 4, D-93055 Regensburg
www.osram-os.com © All Rights Reserved.

SPL LL90_3

Mfr. #:
Manufacturer:
Description:
LASER DIODE 905NM 70W RADIAL
Lifecycle:
New from this manufacturer.
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