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SPL LL90_3
P1-P3
P4-P6
P7-P8
Version 1
.2
SPL
LL90_3
2017
-05-
24
7
Glos
sary
1)
Jun
ction
temp
e
ra
ture
:
Li
mited
due to
plastic p
acka
ge, no
t due to l
aser
chip.
2)
Sta
ndard o
pera
ting
conditi
ons:
>
5
0
ns
pulse
w
idth,
1
kHz
pulse
rep
etition
rate,
18
.5
V
charg
e
v
olta
ge,
15
V
gat
e voltag
e and
25 °C
ambien
t temp
eratur
e. The l
aser
is driven
by the
MOS
FET d
rive
r
El
antec
EL7104C
.
3)
Sw
itchin
g speed
:
Sw
itching
speed
at
gate
depe
nds
on
cu
rrent
and
speed,
char
ging
the
ga
te
c
apacit
ance
(typ.
300
p
F)
of
the
interna
l
transi
s
tor
.
Reduc
ed
pul
s
e
wid
ths
, ris
e
and
f
all
times
o
ccur
at
tri
gger
pu
lse
wid
ths
<
50
ns.
This a
lso
reduces
the op
tical p
eak
power.
2017
-05-
24
8
Version 1
.2
SPL
LL90_3
Pub
lished b
y OS
RAM O
pto
Semi
conduct
ors
GmbH
Leib
nizstr
aße 4,
D-93
055 R
egens
burg
www
.osra
m-os.
com ©
All R
ights R
eserve
d.
P1-P3
P4-P6
P7-P8
SPL LL90_3
Mfr. #:
Buy SPL LL90_3
Manufacturer:
Description:
LASER DIODE 905NM 70W RADIAL
Lifecycle:
New from this manufacturer.
Delivery:
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EMS
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SPL LL90_3