SPI47N10

P1-P3 P4-P6 P7-P8

2002-01-09

Page 1

Preliminary data SPI47N10

SPP47N10,SPB47N10

SIPMOS







Power-Transistor

Product Summary

V

DS

100 V

R

DS

(

on

)

33 m

I

D

47 A

Feature

N-Channel

Enhancement mode

175°C operating temperature

Avalanche rated

dv/dt rated

P-TO263-3-2 P-TO220-3-1P-TO262-3-1

Marking

47N10

47N10

47N10

Type Package Ordering Code

SPP47N10 P-TO220-3-1 Q67040-S4183

SPB47N10 P-TO263-3-2 Q67040-S4173

SPI47N10 P-TO262-3-1 Q67060-S7431

Maximum Ratings,at T

j

= 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Continuous drain current

T

C

=25°C

T

C

=100°C

I

D

47

33

A

Pulsed drain current

T

C

=25°C

I

D puls

188

Avalanche energy, single pulse

I

D

=47 A , V

DD

=25V, R

GS

=25

E

AS

400 mJ

Avalanche energy, periodic limited by T

j

max

E

AR

17.5

Reverse diode dv/dt

I

S

=47A, V

DS

=0V, di/dt=200A/µs

dv/dt 6 kV/µs

Gate source voltage V

GS

±20

V

Power dissipation

T

C

=25°C

P

tot

175 W

Operating and storage temperature T

j

,

T

st

g

-55... +175

°C

IEC climatic category; DIN IEC 68-1 55/175/56

2002-01-09

Page 2

Preliminary data SPI47N10

SPP47N10,SPB47N10

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - case

R

thJC

- - 0.85 K/W

Thermal resistance, junction - ambient, leaded

R

thJA

- - 62

SMD version, device on PCB:

@ min. footprint

@ 6 cm

2

cooling area

1)

R

thJA

-

-

-

-

62

40

Electrical Characteristics, at T

j

= 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

V

GS

=0V, I

D

=2mA

V

(BR)DSS

100 - - V

Gate threshold voltage, V

GS

= V

DS

I

D

= 2 mA

V

GS(th)

2.1 3 4

Zero gate voltage drain current

V

DS

=100V, V

GS

=0V, T

j

=25°C

V

DS

=100V, V

GS

=0V, T

j

=150°C

I

DSS

-

-

0.1

-

1

100

µA

Gate-source leakage current

V

GS

=20V, V

DS

=0V

I

GSS

- 10 100 nA

Drain-source on-state resistance

V

GS

=10V, I

D

=33A

R

DS(on)

- 25 33

m

1

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

2002-01-09

Page 3

Preliminary data SPI47N10

SPP47N10,SPB47N10

Electrical Characteristics, at T

j

= 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance g

fs

V

DS

2*I

D

*R

DS(on)max

,

I

D

=33A

13 26 - S

Input capacitance C

iss

V

GS

=0V, V

DS

=25V,

f=1MHz

- 2000 2500 pF

Output capacitance C

oss

- 370 465

Reverse transfer capacitance C

rss

- 190 240

Turn-on delay time t

d(on)

V

DD

=50V, V

GS

=10V,

I

D

=47A, R

G

=4.7

- 25 39 ns

Rise time t

r

- 23 36

Turn-off delay time t

d(off)

- 63 99

Fall time t

f

- 15 22.5

Gate Charge Characteristics

Gate to source charge Q

gs

V

DD

=80V, I

D

=47A - 19 28.5 nC

Gate to drain charge Q

gd

- 29 43.5

Gate charge total Q

g

V

DD

=80V, I

D

=47A,

V

GS

=0 to 10V

- 70 105

Gate plateau voltage V

(p

lateau

)

V

DD

=80V, I

D

=47A - 6.03 - V

Reverse Diode

Inverse diode continuous

forward current

I

S

T

C

=25°C - - 47 A

Inverse diode direct current,

pulsed

I

SM

- - 188

Inverse diode forward voltage V

SD

V

GS

=0V, I

F

=94A - 1.1 1.5 V

Reverse recovery time t

rr

V

R

=50V, I

F

=

l

S

,

di

F

/dt=100A/µs

- 100 150 ns

Reverse recovery charge Q

rr

- 400 600 nC

P1-P3 P4-P6 P7-P8

SPI47N10

Mfr. #:

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CH 100V 47A I2PAK

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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