OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SPI47N10

P1-P3P4-P6P7-P8
2002-01-09
Page 4
Preliminary data SPI47N10
SPP47N10,SPB47N10
1 Power dissipation
P
tot
= f (T
C
)
0 20 40 60 80 100 120 140 160
°C
190
T
C
0
20
40
60
80
100
120
140
160
W
190
SPP47N10
P
tot
2 Drain current
I
D
= f (T
C
)
parameter: V
GS
10 V
0 20 40 60 80 100 120 140 160
°C
190
T
C
0
5
10
15
20
25
30
35
40
45
A
55
SPP47N10
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
C
= 25 °C
10
-1
10
0
10
1
10
2
10
3
V
V
DS
0
10
1
10
2
10
3
10
A
SPP47N10
I
D
R
D
S
(
o
n
)
=
V
D
S
/
I
D
DC
10 ms
1 ms
100 µs
10 µs
t
p
= 7.1µs
4 Transient thermal impedance
Z
thJC
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SPP47N10
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2002-01-09
Page 5
Preliminary data SPI47N10
SPP47N10,SPB47N10
5 Typ. output characteristic
I
D
= f (V
DS
); T
j
=25°C
parameter: t
p
= 80 µs
0 1 2 3 4 5 6
V
8
V
DS
0
10
20
30
40
50
60
70
80
90
100
A
120
SPP47N10
I
D
V
GS
[V]
a
a 4.0
b
b 4.5
c
c 5.0
d
d 5.5
e
e 6.0
f
f 6.5
g
g 7.5
h
h 8.0
i
i 9.0
j
j 9.0
k
k 10.0
l
P
tot
= 175W
l 20.0
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: V
GS
0 20 40 60 80
A
110
I
D
10
20
30
40
50
60
70
80
m
100
R
DS(on)
9V
10V
20V
vgs[V]
8V
5V
5.5V
6V
6.5V
7V
7.5V
7 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
2 x I
D
x R
DS(on)max
parameter: t
p
= 80 µs
0 1 2 3 4 5 6 7 8
V
10
V
GS
0
5
10
15
20
25
30
35
40
45
50
A
60
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
); T
j
=25°C
parameter: g
fs
0 10 20 30 40
A
60
I
D
0
5
10
15
20
25
S
35
g
fs
2002-01-09
Page 6
Preliminary data SPI47N10
SPP47N10,SPB47N10
9 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= 33 A, V
GS
= 10 V
-60 -20 20 60 100 140
°C
200
T
j
0
10
20
30
40
50
60
70
80
90
100
110
m
130
SPP47N10
R
DS(on)
typ
98%
10 Gate threshold voltage
V
GS(th)
= f (T
j
)
parameter: V
GS
= V
DS
, I
D
= 2 mA
-60 -20 20 60 100 140
V
200
T
j
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
4
4.4
V
5
V
GS(th)
min
typ
max
11 Typ. capacitances
C = f (V
DS
)
parameter: V
GS
=0V, f=1 MHz
0 5 10 15 20 25 30
V
40
V
DS
2
10
3
10
4
10
pF
C
C
iss
C
oss
C
rss
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: T
, tp = 80 µs
0 0.4 0.8 1.2 1.6 2 2.4
V
3
V
SD
0
10
1
10
2
10
3
10
A
SPP47N10
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 175 °C typ
T
j
= 175 °C (98%)
P1-P3P4-P6P7-P8

SPI47N10

Mfr. #:
Buy SPI47N10
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 100V 47A I2PAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet