© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 11
1 Publication Order Number:
MC14012B/D
MC14012B
Dual 4-Input NAND Gates
The MC14012B dual 4−input NAND gates are constructed with
P−Channel and N−Channel enhancement mode devices in a single
monolithic structure (Complementary MOS). Their primary use is
where low power dissipation and/or high noise immunity is desired.
Features
• Supply Voltage Range = 3.0 Vdc to 18 Vdc
• All Outputs Buffered
• Capable of Driving Two Low−Power TTL Loads or One Low−Power
Schottky TTL Load Over the Rated Temperature Range
• Double Diode Protection on All Inputs
• Pin−for−Pin Replacements for Corresponding CD4000 Series B
Suffix Devices
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• This Device is Pb−Free and is RoHS Compliant
MAXIMUM RATINGS (Voltages Referenced to V
SS
)
Symbol
Parameter Value Unit
V
DD
DC Supply Voltage Range −0.5 to +18.0 V
V
in
, V
out
Input or Output Voltage Range
(DC or Transient)
−0.5 to V
DD
+ 0.5 V
I
in
, I
out
Input or Output Current
(DC or Transient) per Pin
± 10 mA
P
D
Power Dissipation, per Package
(Note 1)
500 mW
T
A
Ambient Temperature Range −55 to +125 °C
T
stg
Storage Temperature Range −65 to +150 °C
T
L
Lead Temperature
(8−Second Soldering)
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Temperature Derating: “D/DW” Package: –7.0 mW/_C From 65_C To 125_C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high−impedance circuit. For proper operation, V
in
and V
out
should be constrained
to the range V
SS
≤ (V
in
or V
out
) ≤ V
DD
.
Unused inputs must always be tied to an appropriate logic voltage level
(e.g., either V
SS
or V
DD
). Unused outputs must be left open.
MARKING DIAGRAM
SOIC−14
D SUFFIX
CASE 751A
1
14
14012BG
AWLYWW
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
G = Pb−Free Package
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
