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IRFU224PBF

P1-P3P4-P6P7-P9P10-P11
IRFR224, IRFU224, SiHFR224, SiHFU224
www.vishay.com
Vishay Siliconix
S13-0165-Rev. C, 04-Feb-13
1
Document Number: 91271
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR224, SiHFR224)
• Straight Lead (IRFU224, SiHFU224)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs form Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave solderig techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V; starting T
J
= 25 °C, L = 14 mH, R
g
= 25 , I
AS
= 3.8 A (see fig. 12).
c. I
SD
3.8 A, dI/dt 90 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
V
DS
(V) 250
R
DS(on)
()V
GS
= 10 V 1.1
Q
g
(Max.) (nC) 14
Q
gs
(nC) 2.7
Q
gd
(nC) 7.8
Configuration Single
N-Channel MOSFET
G
D
S
DPAK
(TO-252)
IPAK
(TO-251)
G
D
S
S
D
G
D
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and Halogen-free SiHFR224-GE3 SiHFR224TR-GE3 SiHFR224TRL-GE3 SiHFU224-GE3
Lead (Pb)-free
IRFR224PbF IRFR224TRPbF
a
IRFR224TRLPbF
a
IRFU224PbF
SiHFR224-E3 SiHFR224T-E3
a
SiHFR224TL-E3
a
SiHFU224-E3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
250
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
3.8
A
T
C
= 100 °C 2.4
Pulsed Drain Current
a
I
DM
15
Linear Derating Factor 0.33
W/°C
Linear Derating Factor (PCB Mount)
e
0.020
Single Pulse Avalanche Energy
b
E
AS
130 mJ
Repetitive Avalanche Current
a
I
AR
3.8 A
Repetitive Avalanche Energy
a
E
AR
4.2 mJ
Maximum Power Dissipation T
C
= 25 °C
P
D
42
W
Maximum Power Dissipation (PCB Mount)
e
T
A
= 25 °C 2.5
Peak Diode Recovery dV/dt
c
dV/dt 4.8 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
d
for 10 s 260
IRFR224, IRFU224, SiHFR224, SiHFU224
www.vishay.com
Vishay Siliconix
S13-0165-Rev. C, 04-Feb-13
2
Document Number: 91271
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
a. When mounted on 1" square PCB ( FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient
(PCB Mount)
a
R
thJA
-50
°C/W
Maximum Junction-to-Ambient R
thJA
- 110
Maximum Junction-to-Case R
thJC
-3.0
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 250 - - V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.36 - V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.0 - 4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 250 V, V
GS
= 0 V - - 25
μA
V
DS
= 200 V, V
GS
= 0 V, T
J
= 125 °C - - 250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 2.3 A
b
--1.1
Forward Transconductance g
fs
V
DS
= 50 V, I
D
= 2.3 A
b
1.5 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
c
- 260 -
pFOutput Capacitance C
oss
-77-
Reverse Transfer Capacitance C
rss
-15-
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 4.4 A, V
DS
= 200 V,
see fig. 6 and 13
b, c
--14
nC Gate-Source Charge Q
gs
--2.7
Gate-Drain Charge Q
gd
--7.8
Turn-On Delay Time t
d(on)
V
DD
= 125 V, I
D
= 4.4 A,
R
G
= 18 , R
D
= 28 ,
see fig. 10
b, c
-7.0-
ns
Rise Time t
r
-13-
Turn-Off Delay Time t
d(off)
-20-
Fall Time t
f
-12-
Internal Drain Inductance L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance L
S
-7.5-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--3.8
A
Pulsed Diode Forward Current
a
I
SM
--15
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 3.8 A, V
GS
= 0 V
b
--1.8V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 4.4 A, dI/dt = 100 A/μs
b
- 200 400 ns
Body Diode Reverse Recovery Charge Q
rr
- 0.93 1.9 μC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G
IRFR224, IRFU224, SiHFR224, SiHFU224
www.vishay.com
Vishay Siliconix
S13-0165-Rev. C, 04-Feb-13
3
Document Number: 91271
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
P1-P3P4-P6P7-P9P10-P11

IRFU224PBF

Mfr. #:
Buy IRFU224PBF
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-CH 250V HEXFET MOSFET I-PAK
Lifecycle:
New from this manufacturer.
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