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USBULC6-2M6

P1-P3P4-P6P7-P9P10-P10
November 2007 Rev 1 1/10
USBULC6-2M6
Ultra large bandwidth ESD protection
Features
■ 2 data line 15 kV ESD protection
■ Protects 5 V V
BUS
when applicable
■ Ultra low capacitance: 0.65 pF at F = 240 MHz
■ Very low leakage current: 0.5 µA max.
■ Fast response time compared with varistors
■ µQFN 6 lead package
■ RoHS compliant
Benefits
■ ESD protection of V
BUS
(when applicable)
■ High bandwidth to minimize impact on data
signal quality
■ Low PCB space occupation
■ Low leakage current profides longer operation
of battery powered devices
■ Higher reliability offered by monolithic
integration
Complies with these standards:
■ IEC 61000-4-2 level 4
– 15 kV air discharge
– 8 kV contact discharge
Applications
■ USB 2.0 ports including Hi-Speed USB ports
up to 480 Mb/s as well as full and low speed
USB ports
■ Ethernet port: 10/100/1000 Mb/s
■ Video line protection
■ Portable electronics
Figure 1. Functional diagram (top view)
Description
The USBULC6-2M6 is a monolithic, application
specific discrete device dedicated to ESD
protection of high speed interfaces.
Its ultra low line capacitance provides high
bandwidth and secures a high level of signal
integrity without compromizing the protection of
downstream sensitive chips against the most
stringent characterized ESD strikes.
µQFN
(pin view)
www.st.com
Characteristics USBULC6-2M6
2/10
1 Characteristics
Table 1. Absolute ratings
Symbol Parameter Value Unit
V
PP
Peak pulse voltage
IEC 61000-4-2 air discharge
IEC 61000-4-2 contact discharge
MIL STD883G-Method 3015-7
±15
±15
±25
kV
T
stg
Storage temperature range -55 to +150 °C
T
j
Maximum junction temperature 150 °C
T
L
Lead solder temperature (10 seconds duration) 260 °C
Table 2. Electrical characteristics (T
amb
= 25 °C)
Symbol Parameter Test conditions
Value
Unit
Min. Typ. Max
I
RM
Leakage current V
RM
= 5 V 0.5 µA
V
BR
Breakdown voltage between V
BUS
and GND
I
R
= 1 mA 6 V
V
CL
Clamping voltage
I
PP
= 1 A, t
p
= 8/20 µs
Any I/O pin to GND
12 V
I
PP
= 5 A, t
p
= 8/20 µs
Any I/O pin to GND
17 V
C
i/o-GND
Capacitance between I/O and GND
V
R
= 0 V, F = 1 MHz
Any I/O pin to ground
0.95 1.1
pF
V
R
= 0 V, F = 240 MHz
Any I/O pin to ground
0.65 0.85
ΔC
i/o-GND
Capacitance variation between I/O
and GND
V
R
= 0 V, F = 1 MHz
Any I/O pin to ground
0.020
C
i/o-i/o
Capacitance between I/O
V
R
= 0 V, F = 1 MHz
Ground not connected
0.5 0.55
V
R
= 0 V, F = 240 MHz
Ground not connected
0.35 0.4
USBULC6-2M6 Characteristics
3/10
Figure 2. Line capacitance versus frequency
(typical values)
Figure 3. Relative variation of leakage
current versus junction
temperature (typical values)
Figure 4. Attenuation measurement Figure 5. Crosstalk measurements
Figure 6. Remaing voltage on I/O1 after the
USBULC6-2M6 during positive
ESD surge (15 kV Air)
Figure 7. Remaing voltage on I/O2 after the
USBULC6-2M6 during negative
ESD surge (15 kV Air)
I/O - GND
I/O – I/O
0.0
100.0
200.0
300.0
400.0
500.0
600.0
700.0
800.0
900.0
1000.0
0123
C(fF)
F(GHz)
1
2
3
4
5
25 50 75 100 125
I[T
RM j
] / I [T
RM j
=25°C]
T (°C)
j
S21(db)
300.0k 1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G
- 16.00
- 12.00
- 8.00
- 4.00
0.00
F(Hz)
dB
300.0k 1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G
- 120.00
- 90.00
- 60.00
- 30.00
0.00
F (Hz)
10V/Div
100ns/Div
10V/Div
100ns/Div
P1-P3P4-P6P7-P9P10-P10

USBULC6-2M6

Mfr. #:
Buy USBULC6-2M6
Manufacturer:
STMicroelectronics
Description:
TVS Diodes / ESD Suppressors ULTRA LG BANDWIDTH ESD PROTECTION
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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