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AMB0480A5RJ

P1-P3P4-P6P7-P9P10-P12P13-P15
13
IDTAMB0480
ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM
COMMERCIAL TEMPERATURE RANGE
DDR BIAS
PLL AND CHANNEL BIAS
AMB0480
DDRC_B18
DDRC_C14
DDRC_C18
V
DD
VSS
RC12
R
B12
DDRC_C12
DDRC_B12
R
B18
R
C18
AMB0480
VCC
VSS
C1
C2
VSSAPLL
V
CCFBD
RFBDRES
FBDRES
VCCAPLL
PLLTSTO
R
PLLTST
R
L
NOTES:
1. Refer to JEDEC PC2-4200/5300/6400 DDR2 FULLY BUFFERED DIMM DESIGN SPECIFICATIONS, rev 2.0.
2. The resistor R must be 0Ω and the inductor L needs to be replaced with a 0Ω resistor. The resistor RFBDRES = 100Ω and Resistor RPLLTST = 51Ω.
3. It is not recommended to use a serpentine copper trace in place of the resistor R. This resistor value needs to be AMB manufacturer defined and not set to a single fixed value.
Some raw cards have implemented the resistor with a serpentine copper trace on the DIMM PCB, while others use a discrete resistor. The limitation of using the copper trace
has been discussed in JEDEC, highlighting that the resistor implemented as a serpentine copper trace is not a generic solution. The raw card artwork now allows the option of
bypassing any serpentine trace with a 0Ω resistor to VCC.
14
COMMERCIAL TEMPERATURE RANGE
IDTAMB0480
ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM
MISCELLANEOUS BIAS
BIAS COMPONENTS - RECOMMENDED VALUES AMB0480
AMB0480
VDD
VSS
R1
HVM
TESTLO_AC20
RSA0
R2
R4
R3
VSS
VSS
TESTLO_AB20
SA0
SA0
SPD
Gold Finger
TESTLO_F8
TESTLO_A13
TESTLO_B13
TESTLO_B17
TESTLO_G16
BFUNC
TEST_F9
TEST_A17
TEST_F21
TEST_F22
NC
NC
NC
NC
NOTES:
1. Refer to JEDEC PC2-4200/5300/6400 DDR2 FULLY BUFFERED DIMM DESIGN SPECIFICATIONS, rev 2.0.
2. Component values for the AMB0480 are summarized in the BIAS COMPONENT table.
Schematic Diagram Reference Value Description
RC12 82Ω The impedance of the pull up (PRU) and pull down (PRD) on the AMB DDR Outputs is relatedto RB12
& RC12 as follows:
RC12 = RB12 = 5.3125 * Desired Output Impedance
DDR Bias RB12 82Ω A resistor value of 82Ω results in an impedance at a JEDEC nominal value of 15Ω. The user can adjust
these value to optimize the DDR output impedance for a DIMM raw card configuration.
RB18 825Ω
RC18 121Ω
R0Ω Resistor R must be 0Ω
L0Ω Inductor L needs to be replaced with a 0Ω resistor
PLL and Channel C
1 10μF
C2 10μF
RPLLTSTO 51Ω
RFBDRES 100Ω
R
1 Not loaded
R2 Not loaded
Miscellaneous R3 0Ω
R4 0Ω
RSA0 825Ω
15
IDTAMB0480
ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM
COMMERCIAL TEMPERATURE RANGE
ORDERING INFORMATION
CORPORATE HEADQUARTERS for SALES: for Tech Support:
6024 Silver Creek Valley Road 800-345-7015 or 408-284-8200 logichelp@idt.com
San Jose, CA 95138 fax: 408-284-2775
www.idt.com
IDTAMB
Temp. Range
XXXX
Device Type
XX
Package
Advanced Memory Buffer for Fully Buffered DIMM Modules
RJ
BJG
RH
HJG
0480
Ball Grid Array - RoHS Compliant
BGA - Green
Ball Grid Array with heat spreader - RoHS Compliant
BGA with heat spreader- Green
Blank
Commercial (0°C to +70°C)
(1)
(1)
Device Revision
XX
X
XX
Revision
Blank
8
Tray
Tape and Reel
Shipping
Carrier
X
NOTE:
1. Contact factory for availability.
Other Ordering Information
AMB0480xxRJ8 AMB in bare die packaged in tape/reel
AMB0480xxRJ AMB in bare die packaged in tray
AMB0480xxRH8 AMB with heatspreader packaged in tape/reel
AMB0480xxRH AMB with heatspreader packaged in tray
Device Revision Status
A5 AMB revision A1.5 Active
P1-P3P4-P6P7-P9P10-P12P13-P15

AMB0480A5RJ

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IC REDRIVER 4GBPS 655FCBGA
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