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HSMP-4810-BLKG

P1-P3P4-P6P7-P9
HSMP-381x, 481x
Surface Mount RF PIN
Low Distortion Attenuator Diodes
Data Sheet
Features
x Diodes Optimized for:
– Low Distortion Attenuating
– Microwave Frequency Operation
x Surface Mount Packages
– Single and Dual Versions
– Tape and Reel Options Available
x Low Failure in Time (FIT) Rate
[1]
x Lead free
Note:
1. For more information see the Surface Mount PIN Reliability Data
Sheet.
Package Lead Code Identification,
SOT-23
(Top View)
Description/Applications
The HSMP-381x series is specifically designed for low dis-
tortion attenuator applications. The HSMP-481x products
feature ultra low parasitic inductance in the SOT-23 and
SOT-323 packages. They are specifically designed for use
at frequencies which are much higher than the upper limit
for conventional diodes.
A SPICE model is not available for PIN diodes as SPICE
does not provide for a key PIN diode characteristic, carrier
lifetime.
COMMON
CATHODE
#4
COMMON
ANODE
#3
SERIES
#2
SINGLE
#0
12
3
12
3
12
3
12
3
4810
12
3
DUAL
CATHODE
REVERSE
SERIES
#5
12
3
Package Lead Code Identification,
SOT-323
(Top View)
COMMON
CATHODE
F
COMMON
ANODE
E
SERIES
C
SINGLE
B
481B
DUAL CATHODE
2
Absolute Maximum Ratings
[1]
T
C
= +25°C
Symbol Parameter Unit SOT-23 SOT-323
I
f
Forward Current (1 µs Pulse) Amp 1 1
P
IV
Peak Inverse Voltage V Same as V
BR
Same as V
BR
T
j
Junction Temperature °C 150 150
T
stg
Storage Temperature °C -65 to 150 -65 to 150
T
jc
Thermal Resistance
[2]
°C/W 500 150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T
C
= +25°C, where T
C
is defined to be the temperature at the package pins where contact is made to the circuit board.
Electrical Specifications T
C
= +25°C (Each Diode)
Conventional Diodes
Part
Number
HSMP-
Package
Marking
Code
Lead
Code Configuration
Minimum
Breakdown
Voltage V
BR
(V)
Maximum
Total
Capacitance
C
T
(pF)
Minimum
Resistance
at
I
F
= 0.01mA,
RH (Ω)
Maximum
Resistance
at
I
F
= 20mA,
R
L
(Ω)
Maximum
Resistance
at
I
F
= 100mA,
RT (Ω)
Resistance
at
I
F
= 1mA,
R
M
(Ω)
3810 E0 0 Single
100 0.35 1500 10 3.0 48 to 70
3812 E2 2 Series
3813 E3 3 Common Anode
3814 E4 4 Common Cathode
3815 E5 5 Reverse Series
381B E0 B Single
381C E2 C Series
381E E3 E Common Anode
381F E4 F Common Cathode
Test Conditions V
R
= V
BR
Measure
I
R
≤ 10uA
V
R
= 50V
f = 1MHz
I
F
= 0.01mA
f = 100MHz
I
F
= 20mA
f = 100MHz
I
F
= 100mA
f = 100MHz
I
F
= 1mA
f = 100MHz
High Frequency (Low Inductance, 500 MHz – 3 GHz) PIN Diodes
Part
Number
HSMP-
Package
Marking
Code
Lead
Code Configuration
Minimum
Breakdown
Voltage
V
BR
(V)
Maximum
Series
Resistance
R
S
(Ω)
Series
Resistance
I
F
= 1mA,
R
M
(Ω)
Typical
Total
Capacitance
C
T
(pF)
Maximum
Total
Capacitance
C
T
(pF)
Typical
Total
Inductance
L
T
(nH)
4810 EB B Dual Cathode
100 3 48 - 70 0.35 0.4 1
481B EB B Dual Cathode
Test Conditions V
R
= V
BR
Measure
I
R
≤ 10A
I
F
= 100mA
f =
100MHz
I
F
= 1mA
f = 100MHz
V
R
= 50V
f = 1MHz
V
R
= 50V
f = 1MHz
f =
500MHz
- 3GHz
3
Typical Parameters at T
C
= 25°C
Part Number Series Resistance Carrier Lifetime Reverse Recovery Time
Total
Capacitance
HSMP- R
S
(Ω) W (ns) T
rr
(ns) C
T
(pF)
381x 53 1500 300 0.27 @ 50 V
Test Conditions I
F
= 1 mA
f = 100 MHz
I
F
= 50 mA
I
R
= 250 mA
V
R
= 10 V
I
F
= 20 mA
90% Recovery
f = 1 MHz
Typical Parameters at T
C
= 25°C (unless otherwise noted), Single Diode
10000
1000
100
10
1
RF RESISTANCE (OHMS)
0.01 0.1 1 10 100
I
F
– FORWARD BIAS CURRENT (mA)
T
A
= +85 C
T
A
= +25 C
T
A
= –55 C
Figure 2. RF Resistance vs. Forward
Bias Current, f = 100MHz
0.15
0.30
0.25
0.20
0.35
0.40
0.45
02 64101281614 18 20
TOTAL CAPACITANCE (pF)
REVERSE VOLTAGE (V)
Figure 1. RF Capacitance vs. Reverse
Bias.
1 MHz
30 MHz
frequency>100 MHz
120
110
100
90
80
70
60
50
40
1000 100 10
Diode Mounted as a
Series Attenuator
in a 50 Ohm Microstrip
and Tested at 123 MHz
DIODE RF RESISTANCE (OHMS)
Figure 3. 2nd Harmonic Input
Intercept Point vs. Diode RF
Resistance.
INPUT INTERCEPT POINT (dBm)
100
10
1
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2
I
F
– FORWARD CURRENT (mA)
V
F
– FORWARD VOLTAGE (mA)
Figure 4. Forward Current vs. Forward
Voltage.
125 C 25 C
–50 C
INPUT
RF IN/OUT
Figure 5. Four Diode π Attenuator. See Application Note 1048
for Details.
FIXED
BIAS
VOLTAGE
VARIABLE BIAS
Typical Applications for Multiple Diode Products
Notes:
3. Typical values were derived using limited samples during initial product characterization and may not be representative of the overall distribution.
P1-P3P4-P6P7-P9

HSMP-4810-BLKG

Mfr. #:
Buy HSMP-4810-BLKG
Manufacturer:
Broadcom / Avago
Description:
PIN Diodes 100 VBR 0.35 pF
Lifecycle:
New from this manufacturer.
Delivery:
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