IRGP4066PbF/IRGP4066-EPbF
2 www.irf.com
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 10μH, R
G
= 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
θ
is measured at T
J
of approximately 90°C.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600 — — V
V
GE
= 0V, I
C
= 100μA
ΔV
(BR)CES
/ΔT
J
Temperature Coeff. of Breakdown Voltage
— 260 — mV/°C
V
GE
= 0V, I
C
= 2.0mA (25°C-175°C)
—1.72.1V
I
C
= 75A, V
GE
= 15V, T
J
= 25°C
V
CE(on)
Collector-to-Emitter Saturation Voltage — 2.0 — V
I
C
= 75A, V
GE
= 15V, T
J
= 150°C
—2.1—
I
C
= 75A, V
GE
= 15V, T
J
= 175°C
V
GE(th)
Gate Threshold Voltage 4.0 — 6.5 V
V
CE
= V
GE
, I
C
= 2.1mA
Δ
V
GE(th)
/
Δ
TJ
Threshold Voltage temp. coefficient — -16 — mV/°C
V
CE
= V
GE
, I
C
= 2.1mA (25°C - 175°C)
gfe Forward Transconductance — 50 — S
V
CE
= 50V, I
C
= 75A, PW = 60μs
I
CES
Collector-to-Emitter Leakage Current — 1.0 100 μA
V
GE
= 0V, V
CE
= 600V
— 1040 —
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current — — ±200 nA
V
GE
= ±20V
Switching Characteristics @ T
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
g
Total Gate Charge (turn-on) — 150 225
I
C
= 75A
Q
ge
Gate-to-Emitter Charge (turn-on) — 40 60 nC
V
GE
= 15V
Q
gc
Gate-to-Collector Charge (turn-on) — 60 90
V
CC
= 400V
E
on
Turn-On Switching Loss — 2465 3360
I
C
= 75A, V
CC
= 400V, V
GE
= 15V
E
off
Turn-Off Switching Loss — 2155 3040 μJ
R
G
= 10
, L = 200μH, T
J
= 25°C
E
total
Total Switching Loss — 4620 6400
Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 50 70
I
C
= 75A, V
CC
= 400V, V
GE
= 15V
t
r
Rise time — 70 90 ns
R
G
= 10Ω, L = 200μH, T
J
= 25°C
t
d(off)
Turn-Off delay time — 200 225
t
f
Fall time — 60 80
E
on
Turn-On Switching Loss — 3870 —
I
C
= 75A, V
CC
= 400V, V
GE
=15V
E
off
Turn-Off Switching Loss — 2815 — μJ
R
G
=10
, L=200μH,T
J
= 175°C
E
total
Total Switching Loss — 6685 —
Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 50 —
I
C
= 75A, V
CC
= 400V, V
GE
= 15V
t
r
Rise time — 70 — ns
R
G
= 10Ω, L = 200μH
t
d(off)
Turn-Off delay time — 240 —
T
J
= 175°C
t
f
Fall time — 70 —
C
ies
Input Capacitance — 4440 — pF
V
GE
= 0V
C
oes
Output Capacitance — 245 —
V
CC
= 30V
C
res
Reverse Transfer Capacitance — 130 — f = 1.0Mhz
T
J
= 175°C, I
C
= 300A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
V
CC
= 480V, Vp = 600V
Rg = 10Ω, V
GE
= +20V to 0V
SCSOA Short Circuit Safe Operating Area 5 — — μs
V
CC
= 400V, Vp 600V
Rg = 10
, V
GE
= +15V to 0V
Conditions
