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IRGP4066-EPBF

P1-P3P4-P6P7-P9P10-P10
IRGP4066PbF/IRGP4066-EPbF
4 www.irf.com
Fig. 7 - Typ. IGBT Output Characteristics
T
J
= 175°C; tp = ≤60μs
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 10 - Typical V
CE
vs. V
GE
T
J
= 175°C
Fig. 11 - Typ. Transfer Characteristics
V
CE
= 50V; tp = 60μs
Fig. 8 - Typical V
CE
vs. V
GE
T
J
= -40°C
Fig. 12 - Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
0 2 4 6 8 10
V
CE
(V)
0
50
100
150
200
250
300
I
C
E
(
A
)
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8.0V
5 101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 38A
I
CE
= 75A
I
CE
= 150A
5 101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 38A
I
CE
= 75A
I
CE
= 150A
5 101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 38A
I
CE
= 75A
I
CE
= 150A
4 6 8 1012141618
V
GE,
Gate-to-Emitter Voltage
(V)
0
50
100
150
200
250
300
I
C
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
C
u
r
r
e
n
t
(
A
)
T
J
= 175°C
T
J
= 25°C
0 25 50 75 100 125 150
I
C
(A)
0
2000
4000
6000
8000
10000
12000
E
n
e
r
g
y
(
μ
J
)
E
OFF
E
ON
IRGP4066PbF/IRGP4066-EPbF
www.irf.com 5
Fig. 14 - Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 200μH; V
CE
= 400V, I
CE
= 75A; V
GE
= 15V
Fig. 15 - Typ. Switching Time vs. R
G
T
J
= 175°C; L = 200μH; V
CE
= 400V, I
CE
= 75A; V
GE
= 15V
Fig. 16 - V
GE
vs. Short Circuit Time
V
CC
= 400V; T
C
= 25°C
Fig. 17 - Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
0 50 100 150
I
C
(A)
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
Fig. 13 - Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
0 255075100
Rg (Ω)
1000
3000
5000
7000
9000
11000
E
n
e
r
g
y
(
μ
J
)
E
OFF
E
ON
0 20 40 60 80 100 120
R
G
(Ω)
10
100
1000
10000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
0 100 200 300 400 500
V
CE
(V)
10
100
1000
10000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
8 1012141618
V
GE
(V)
0
5
10
15
20
T
i
m
e
(
μ
s
)
0
200
400
600
800
C
u
r
r
e
n
t
(
A
)
T
sc
I
sc
IRGP4066PbF/IRGP4066-EPbF
6 www.irf.com
Fig. 18 - Typical Gate Charge
vs. V
GE
I
CE
= 75A; L = 485μH
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
0 20 40 60 80 100 120 140 160
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
,
G
a
t
e
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
V
CES
= 400V
V
CES
= 300V
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci i/Ri
Ci= τi/Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
Ri (°C/W) τi (sec)
0.00738 0.000009
0.09441
0.000179
0.13424 0.002834
0.09294
0.0182
P1-P3P4-P6P7-P9P10-P10

IRGP4066-EPBF

Mfr. #:
Buy IRGP4066-EPBF
Manufacturer:
Infineon / IR
Description:
IGBT Transistors 600V Low VCEon Trench IGBT
Lifecycle:
New from this manufacturer.
Delivery:
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