AOWF4N60
Symbol Min Typ Max Units
600
700
BV
DSS
0.67
V/
o
C
1
10
I
GSS
Gate-Body leakage current
±100
nΑ
V
GS(th)
Gate Threshold Voltage
3.4 4.1 4.5 V
R
DS(ON)
1.8 2.3 Ω
g
FS
6 S
V
SD
0.76 1 V
I
S
Maximum Body-Diode Continuous Current 4 A
I
SM
14 A
C
iss
420 528 640 pF
C
oss
35 53 70 pF
C
rss
2.5 4.8 7 pF
R
g
1.2 2.5 3.8 Ω
Q
g
9.5 12 14.5 nC
Q
gs
2.8 3.6 4.5 nC
Q
gd
2.2 4.4 6.6 nC
t
D(on)
17 ns
t
r
26 ns
t
34 ns
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=2A
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=25V, f=1MHz
SWITCHING PARAMETERS
I
S
=1A,V
GS
=0V
V
DS
=40V, I
D
=2A
Forward Transconductance
Turn-On Rise Time
Gate Source Charge
Gate Drain Charge
Diode Forward Voltage
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
DSS
Zero Gate Voltage Drain Current
V
DS
=600V, V
GS
=0V
µA
BV
DSS
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
Turn-Off DelayTime
V
GS
=10V, V
DS
=300V, I
D
=4A,
R
G
=25Ω
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=480V, I
D
=4A
DYNAMIC PARAMETERS
V
DS
=5V,
I
D
=250µA
V
DS
=480V, T
J
=125°C
V
DS
=0V, V
GS
=±30V
V
Drain-Source Breakdown Voltage
I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
Zero Gate Voltage Drain Current ID=250µA, VGS=0V
t
f
21 ns
t
rr
150 190 230 ns
Q
rr
1.9 2.4 3
µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
I
F
=4A,dI/dt=100A/µs,V
DS
=100V
Body Diode Reverse Recovery Charge
I
F
=4A,dI/dt=100A/µs,V
DS
=100V
Turn-Off Fall Time
Body Diode Reverse Recovery Time
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C, Ratings are based on low frequency and duty cycles to keep initial
T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. L=30mH, I
AS
=2.8A, V
DD
=150V, R
G
=25Ω, Starting T
J
=25°C
Rev0: Nov 2011 www.aosmd.com Page 2 of 5
