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AOWF4N60
P1-P3
P4-P5
AOWF4N60
TYPICA
L ELECTRICA
L A
ND THERMAL CHA
RA
CTERISTICS
0
3
6
9
12
15
0
3
6
9
12
15
18
V
GS
(Volts)
Q
g
(nC)
Figure 7:
Ga
te-Charge
Characteristics
V
DS
=480V
I
D
=4A
1
10
100
1000
10000
0.1
1
10
100
Capacitance
(pF)
V
DS
(Volts)
Figure 8:
C
apacitance
C
haracteristics
C
iss
C
oss
C
rss
0.01
0.1
1
10
100
1
10
100
1000
I
D
(Amps)
V
DS
(Volts)
10
µ
s
10ms
1ms
0.1s
DC
R
DS(ON)
limited
T
J(Max)
=150
°
C
T
C
=25
°
C
100
µ
s
0
1
2
3
4
5
0
25
50
75
100
125
150
Current
rating I
D
(A
)
T
CASE
(°
C)
Figure 9:
C
urrent
De
-
rating
(Note B)
1s
Figure 10:
Maximum Forw
ard Biased Safe
Operating
Area for AOWF4N60 (Note F)
CASE
Figure 9:
C
urrent
De
-
rating
(Note B)
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Z
θ
θ
θ
θ
JC
Normalized
Transient
Thermal Resistance
Pulse Width
(s)
Figure 11:
Normalized
Max
imum
Transient T
hermal Impedance
f
or A
OWF4N60 (Note
F)
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
R
θ
JC
=5
°
C/W
In descending
or
der
D=0.5, 0.3,
0.1, 0.05, 0.
02, 0.01, single
pu
lse
Single
Pulse
T
on
T
P
D
Rev0: Nov 20
11
www.aosmd
.com
Page 4 of
5
AOWF4N60
-
+
VD
C
I
g
V
d
s
D
U
T
-
+
VD
C
V
g
s
Vg
s
1
0
V
Q
g
Q
g
s
Q
g
d
C
h
a
rg
e
G
at
e
C
ha
rge
T
est
C
irc
u
it
&
W
av
e
f
o
rm
-
+
VD
C
D
U
T
Vd
d
Vg
s
V
d
s
Vg
s
R
L
R
g
Vg
s
V
d
s
1
0
%
9
0
%
R
es
ist
iv
e
Sw
i
t
c
hin
g
T
est
C
ir
cu
it
&
W
av
ef
o
r
ms
t
t
r
d(
o
n)
t
o
n
t
d
(o
f
f)
t
f
t
o
f
f
I
d
+
L
Vg
s
Vd
s
B
V
U
ncla
mp
ed
In
du
c
t
i
v
e
S
w
it
c
h
ing
(
U
I
S
)
T
est
Cir
c
uit
&
W
a
v
e
form
s
V
d
s
D
SS
2
E
=
1
/
2
L
I
A
R
A
R
Vd
d
V
g
s
V
g
s
R
g
D
U
T
-
+
VD
C
Vg
s
I
d
Vg
s
I
I
g
V
g
s
-
+
VD
C
D
U
T
L
V
g
s
V
d
s
I
sd
I
sd
D
iode
R
ec
ov
e
r
y
T
es
t
C
irc
u
it &
W
av
efor
ms
Vd
s
-
V
d
s
+
I
F
A
R
d
I
/
d
t
I
R
M
r
r
V
d
d
V
d
d
Q
=
-
I
d
t
t
r
r
Rev0: Nov 2011
www.aosmd.com
Page 5 of 5
P1-P3
P4-P5
AOWF4N60
Mfr. #:
Buy AOWF4N60
Manufacturer:
Description:
MOSFET N-CH 600V 4A TO262F
Lifecycle:
New from this manufacturer.
Delivery:
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EMS
Payment:
T/T
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AOWF4N60